Method and device for obtaining reference current of memorizer reading circuit as well as reading method

A reference current and reading circuit technology, applied in the field of memory, can solve the problems affecting the reading speed and reading accuracy of the reading circuit, and cannot track, so as to improve the reading speed and reading accuracy, easy voltage tracking, reduce The effect of durability

Inactive Publication Date: 2016-12-07
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, using the above method to obtain the reference current will lead to the inability to track the voltage of each electrode of the target memory cell read, and it is also impossible to determine whether the voltage of each electrode of the target memory cell is consistent with changes in process, voltage, temperature, etc., and finally Affects the reading speed and reading accuracy of the reading circuit

Method used

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  • Method and device for obtaining reference current of memorizer reading circuit as well as reading method
  • Method and device for obtaining reference current of memorizer reading circuit as well as reading method
  • Method and device for obtaining reference current of memorizer reading circuit as well as reading method

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Embodiment Construction

[0027] figure 2 It is a structural schematic diagram of a memory in the prior art. refer to figure 2 , the memory may include:

[0028] A storage array, including a storage unit 211 and a storage unit 212;

[0029] The row decoding circuit 22 is adapted to apply the word line voltage to the word line and the control gate line of the memory cells 211 and 212 during the read operation;

[0030] A column decoding circuit, including a column decoding unit 231 and a column decoding unit 232, adapted to apply a bit line voltage to a bit line of a memory cell during a read operation;

[0031] Read circuit 24, comprising:

[0032] The first input terminal s1 is connected to the bit line of the storage unit 211 through the column decoding unit 231, and is suitable for accessing the reference current I ref ;

[0033] The second input terminal s2 is connected to the bit line of the storage unit 212 through the column decoding unit 232, and is suitable for receiving the read curre...

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Abstract

The invention provides a method and a device for obtaining reference current of a memorizer reading circuit as well as a reading method. The method for obtaining the reference current comprises the following steps: selecting 2n storage units located in the same row of storage units to be read in a storage array and corresponding to different bit lines, in which n is a positive integer; carrying out operation of programming 2n storage units, programming n storage units in the 2n storage units as 01, and programming rest n storage units in the 2n storage units as 10; taking an average value of current of the bit lines of the corresponding 2n storage units during carrying out operation of reading the storage units to be read as the reference current. Through application of the scheme, the reference current is obtained; reading speed and reading accuracy of the reading circuit can be improved; and the influences on durability of the selected storage units are reduced.

Description

technical field [0001] The present invention relates to the technical field of memory, in particular to a method and device for acquiring a reference current of a memory reading circuit, and a reading method. Background technique [0002] Memory is not only an important part of digital integrated circuits, but also an indispensable part of building application systems based on microprocessors. In recent years, various memories have been embedded in the microprocessor to improve the integration and work efficiency of the processor. The performance of the memory array and its peripheral circuits largely determines the work efficiency of the entire system. [0003] The reading circuit is an important part of the peripheral circuit of the memory, and is used for reading the bit data stored in the target memory unit in the memory array. Normally, when the read circuit performs a read operation on the target memory cell, it first obtains the bit line current and the reference cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10
CPCG11C7/1051
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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