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Manufacturing method of thin film transistor structure

A technology of thin film transistors and manufacturing methods, which is applied in the field of liquid crystal display panels, can solve the problems of reducing the pixel aperture ratio and the area occupied by the display panel is too large, and achieve the effect of increasing the pixel aperture ratio and reducing the area

Active Publication Date: 2016-12-07
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a manufacturing method of a thin film transistor structure to solve the technical problem that the existing thin film transistor structure occupies too much area in the display panel and reduces the pixel aperture ratio

Method used

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  • Manufacturing method of thin film transistor structure
  • Manufacturing method of thin film transistor structure
  • Manufacturing method of thin film transistor structure

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Embodiment Construction

[0061] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0062] refer to figure 1 , figure 1It is a schematic flow diagram of the first preferred embodiment of the manufacturing method of the thin film transistor structure of the present invention;

[0063] The manufacturing method of the thin film transistor structure in this preferred embodiment includes the process of forming a stacked first thin film transistor and a second thin film transistor on a substrate, wherein the first thin film transistor and the second thin film transistor share a gate ;

[0064] The process of forming the first thin film transistor is specifically as follows:

[0065] Step S101, sequentially forming a buffer layer and a first organic semiconductor layer on the substrate;

[0066] Step S102, performing an etching ...

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Abstract

The invention provides a manufacturing method of a thin film transistor structure. The method includes the process that a first thin film transistor and a second thin film transistor which are overlapped are formed on a substrate, wherein a grid is shared by the first thin film transistor and the second thin film transistor. The area occupied by multiple thin film transistor structures in a whole display panel can be narrowed, and the pixel aperture rate is increased.

Description

technical field [0001] The invention relates to the field of liquid crystal display panels, in particular to a method for manufacturing a thin film transistor structure. Background technique [0002] The thin film transistor in the display panel is a key device, but the area where the thin film transistor is located is opaque. When there are multiple thin film transistors in the display panel, the area occupied by the multiple thin film transistors in the entire display panel will affect the size of the display panel. Shows some influence. [0003] For example, more and more display panels use Gate Driver on Array (GOA) technology to integrate the gate switch circuit on the thin film transistor structure in the display panel to form a scan drive for the display panel. Therefore, the product cost can be reduced in terms of material cost and manufacturing process. This kind of gate switch circuit integrated on the thin film transistor structure is called gate line integrated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1214H01L27/1251H01L27/1259
Inventor 徐向阳
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD