Semiconductor device, method of fabricating the same, and patterning method

Abstract

A method of fabricating a semiconductor device includes forming first and second active patterns on first and second regions, respectively, of a substrate, forming first and second gate structures on the first and second active patterns, respectively, forming a coating layer to cover the first and second gate structures and the first and second active patterns, and forming a first recess region in the first active pattern between the first gate structures and a second recess region in the second active pattern between the second gate structures.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2015-0134699 filed with the Korean Intellectual Property Office on September 23, 2015, the entire contents of which are hereby incorporated by reference. technical field [0002] The inventive concept relates to semiconductor devices, and in particular, to semiconductor devices having different series of patterns and forming recesses in regions where the different series of patterns are provided. For example, inventive concepts relate to semiconductor devices having metal oxide semiconductor field effect transistors (MOS-FETs) and the formation of recesses in which source / drain electrodes of the MOS-FETs are epitaxially grown. Background technique [0003] Semiconductor devices may include integrated circuits (ICs) including metal oxide semiconductor field effect transistors (MOS-FETs). As the size and design rules of such semiconductor devices decrease, MOS-FETs are becoming increasingly smaller. R...

AI Technical Summary

Problems solved by technology

Reduction in size of MOS-FETs leads to deterioration of operational performance of semiconductor devices

Images