Film forming method and sputtering device
A film forming method and sputtering technology, which can be used in sputtering, vacuum evaporation, ion implantation and other directions, and can solve problems such as disturbing film quality.
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[0041] An example of a sputtering device for implementing the film forming method of the present invention is shown in figure 2 , will be observed from below figure 2 A diagram around the antenna of the device shown in the image 3 middle. exist figure 2 , conceptually represents the high-frequency power P for each antenna 20 R The power supply section, regarding the power supply section, will refer to image 3 And later.
[0042] The sputtering device includes a vacuum container 2 that is evacuated by a vacuum exhaust device 4, and the vacuum container 2 is electrically connected to the ground.
[0043] A sputtering gas 10 is introduced into the vacuum vessel 2 . In the above example, the gas is introduced from the gas source 6 through the flow regulator 8 . The gas 10 is, for example, argon. When reactive sputtering is performed, the gas 10 may be a mixed gas of argon and active gas (such as oxygen, nitrogen, etc.).
[0044] A substrate holder 14 holding a substr...
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