Preparation method of transient voltage suppression diode and transient voltage suppression diode
A transient voltage suppression and photodiode technology, applied in the direction of diodes, circuits, electrical components, etc., can solve the problems of increasing TVS device area and unfavorable device integration, so as to improve integration and reliability, improve reverse characteristics, The effect of reducing the degree of influence
Inactive Publication Date: 2020-10-16
PEKING UNIV FOUNDER GRP CO LTD +1
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] In related technologies, in order to further improve the reverse characteristics of TVS devices, protection structures such as voltage divider protection rings and metal field plate structures are usually set in the preset area of TVS devices, but the above protection structures introduce large additional capacitance and increase The area of the TVS device is reduced, which is not conducive to device integration
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.
[0024] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.
[0025] figure 1 A schematic flowchart of a method for manufacturing a transient voltage suppression diode according to an embodiment of the present invention is shown.
[0026] like figure 1 As sh...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a transient voltage suppressor diode and a preparation method thereof. The preparation method comprises the steps of: forming a P-type epitaxial layer on an N-type substrate, so as to complete the preparation of photodiodes; forming isolation grooves in the P-type epitaxial layer, and dividing each photodiode into two photodiode units by means of each isolation groove; sequentially forming a P-type implantation region and an N-type implantation region in the P-type epitaxial layer of each photodiode unit, so as to form a Zener diode which is connected in series with each of the photodiode units; and forming a front surface metal electrode and a back surface metal electrode on the N-type substrate of the Zener diode. By adopting the transient voltage suppressor diode and the preparation method thereof, the reverse features of a semiconductor device are improved, the influence degree of voltage surges on an integrated circuit is reduced, the additional capacitance is reduced, and the integration and reliability of the semiconductor device are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of a transient voltage suppression diode and a transient voltage suppression diode. Background technique [0002] Transient Voltage Suppressors (TVS, Transient Voltage Suppressors) are used to alleviate the impact and damage of voltage surges on integrated circuits. They have the advantages of low clamping voltage, small size, fast response, small leakage current and high reliability. After the TVS device is loaded with a voltage surge, it can quickly receive and absorb the surge current and reduce the current to a normal level. [0003] In related technologies, in order to further improve the reverse characteristics of TVS devices, protection structures such as voltage divider protection rings and metal field plate structures are usually set in the preset area of TVS devices, but the above protection structures introduce large additional capacitance...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/861H01L29/866H01L29/06H01L21/329
CPCH01L29/0603H01L29/0684H01L29/66204H01L29/861H01L29/866
Inventor李理赵圣哲马万里
OwnerPEKING UNIV FOUNDER GRP CO LTD