Transient voltage suppressor diode and preparation method thereof

A transient voltage suppression and photodiode technology, applied in the direction of diodes, circuits, electrical components, etc., can solve the problems of increasing TVS device area and unfavorable device integration, so as to improve integration and reliability, improve reverse characteristics, Reduce the effect of additional capacitance

Inactive Publication Date: 2017-11-14
PEKING UNIV FOUNDER GRP CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In related technologies, in order to further improve the reverse characteristics of TVS devices, protection structures such as voltage divider protection rings and metal field plate structures are usually set in the preset area of ​​TVS devices, but the above protection structures introduce large additional capacitance and increase The area of ​​the TVS device is reduced, which is not conducive to device integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transient voltage suppressor diode and preparation method thereof
  • Transient voltage suppressor diode and preparation method thereof
  • Transient voltage suppressor diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to understand the above objects, features and advantages of the present invention more clearly, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments may be combined with each other in the case of no conflict.

[0024] Many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. Example limitations.

[0025] figure 1 A schematic flow chart of a method for fabricating a transient voltage suppression diode according to an embodiment of the present invention is shown.

[0026] like figure 1 As shown, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a transient voltage suppressor diode and a preparation method thereof. The preparation method comprises the steps of: forming a P-type epitaxial layer on an N-type substrate, so as to complete the preparation of photodiodes; forming isolation grooves in the P-type epitaxial layer, and dividing each photodiode into two photodiode units by means of each isolation groove; sequentially forming a P-type implantation region and an N-type implantation region in the P-type epitaxial layer of each photodiode unit, so as to form a Zener diode which is connected in series with each of the photodiode units; and forming a front surface metal electrode and a back surface metal electrode on the N-type substrate of the Zener diode. By adopting the transient voltage suppressor diode and the preparation method thereof, the reverse features of a semiconductor device are improved, the influence degree of voltage surges on an integrated circuit is reduced, the additional capacitance is reduced, and the integration and reliability of the semiconductor device are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a method for preparing a transient voltage suppression diode and a transient voltage suppression diode. Background technique [0002] Transient Voltage Suppressors (TVS, Transient Voltage Suppressors) are used to alleviate the impact and damage of voltage surges on integrated circuits. They have the advantages of low clamping voltage, small size, fast response, small leakage current and high reliability. After the TVS device is loaded with a voltage surge, it can quickly absorb the surge current and reduce the current to a normal level. [0003] In the related art, in order to further improve the reverse characteristic of the TVS device, protection structures such as a voltage divider protection ring and a metal field plate structure are usually set in the preset area of ​​the TVS device, but the above protection structure introduces a large additional capacit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/861H01L29/866H01L29/06H01L21/329
CPCH01L29/0603H01L29/0684H01L29/66204H01L29/861H01L29/866
Inventor李理赵圣哲马万里
OwnerPEKING UNIV FOUNDER GRP CO LTD