Semiconductor device
A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problem of increasing on-resistance, and achieve the effects of not increasing on-resistance, improving withstand voltage characteristics, and improving reverse characteristics
Active Publication Date: 2019-08-06
FOUNDER MICROELECTRONICS INT
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Problems solved by technology
[0004] The invention provides a semiconductor device, which is used to solve the problem that the on-resistance will become larger when the breakdown voltage of the device is increased based on the existing device structure
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Embodiment Construction
[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. For convenience of description, the sizes of different layers and regions are enlarged or reduced, so the sizes and ratios shown in the drawings do not necessarily represent actual sizes, nor do they reflect the proportional relationship of sizes.
[0023] figure 2 A schematic cross-sectional structure diagram of a semiconductor device provided in Embodiment 1 of the present invention, such as figure 2 As shown, the device includes:
[0024] A substrate 1 of the first conductivity type, a first doped region 2 of the second conductivity type located on the surface layer of the substrate 1, several second doped regions 3 of the first conductivity type located i...
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The invention provides a semiconductor device which comprises the components of a first-conductive-type substrate, a second-conductive-type first doped region on the surface layer of the substrate, a plurality of first-conductive-type second doped regions in the first doped region, and a first-conductive-type third doped region on the surface layer of the substrate; wherein the first conductive type is opposite to the second conductive type. The third doped region is at the low-voltage end of the device. The first doped region extends to the high-voltage end from one side, which is next to the high-voltage end, of the third doped region. The second doped region is arranged at the high-voltage end of the device. According to the semiconductor device provided by the invention, improvement of a device reverse characteristic is not required through reducing the doping concentration of the first doped region, and based on voltage resistance characteristic improvement of the device, on-resistance increase of the device is prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device. Background technique [0002] Lateral high-voltage semiconductor devices are commonly used devices in power integrated circuits, including lateral double-diffused metal-oxide transistors (LDMOS), lateral insulated gate bipolar transistors (LIGBT), and lateral isolation junctions. The high-voltage end of the lateral high-voltage semiconductor device can withstand high potential (high voltage), which is realized through the voltage-resistant buffer layer therein. Taking the lateral double-diffused metal oxide transistor (LDMOS) as an example, its drain terminal (high voltage terminal) can withstand the high voltage relative to the source terminal (low voltage terminal) and the substrate through the buffer between the drain terminal and the source terminal. layer, and a buffer layer between the drain and the substrate. Generally speaking, the conside...
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IPC IPC(8): H01L29/06H01L29/40
Inventor潘光燃石金成文燕王焜高振杰
OwnerFOUNDER MICROELECTRONICS INT