GaAs-based LED (light emitting diode) flip chip and preparation method thereof and LED display device

Abstract

The invention provides a GaAs-based LED (light emitting diode) flip chip and a preparation method thereof and an LED display device. The GaAs-based LED flip chip comprises a GaAs substrate, an AlGaAs buffer layer, a GaInP etching stop layer, an N-GaAs layer, a quantum well layer, a P-GaAs layer and a P-GaP ohmic contact layer in sequential preparation from bottom to top. A metal contact layer is prepared on the P-GaP ohmic contact layer; a bonding graph in size identical to preset cutting way size of an LED chip is prepared on the metal contact layer; a wet etching process is adopted for etching a cutting way to the upper surface of the N-GaAs layer according to the prepared bonding graph; a bonding layer and a reflection layer are sequentially prepared on a substrate, and the substrate with the reflection layer and the bonding layer is subjected to bonding with an epitaxial wafer treated at the last step for 200-300ms at 300-400 DEG C; a GaAs substrate and the AlGaAs buffer layer are removed by adoption of a chemical wet etching process; the epitaxial wafer treated at the last step is added into acetone solution, and ultrasonic vibration is performed for 3-8min at 30-60 DEG C according to an ultrasonic frequency of 30-60MHZ to remove the GaInP etching stop layer and the N-GaAs layer. The GaAs-based LED flip chip and the preparation method thereof and the LED display device have the advantage that product yield can be increased.

Description

technical field [0001] The invention relates to the technical field of LED chip preparation, in particular to a GaAs-based flip-chip LED chip, a preparation method thereof, and an LED display device. Background technique [0002] GaAs-based LED chips can be used as both light-emitting devices and optoelectronic display devices, and are widely used for their advantages of low energy consumption and high brightness. In the preparation process of GaAs-based LED chips, it is an indispensable process to divide the entire chip into single grains of the required size. [0003] At present, when cutting the GaAs-based flip-chip LED chip, it is realized by using a diamond knife, and the chip after cutting is cleaned. [0004] However, because the GaAs material is relatively brittle, and the front and back of the chip will be vapor-deposited with relatively thick metal materials, the stress on the chip itself is relatively large. In addition, the diamond knife directly contacts the ch...

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