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Semiconductor device structure

A device structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of size reduction and distance reduction between adjacent devices

Inactive Publication Date: 2018-01-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as feature sizes continue to decrease, the distance between adjacent devices shrinks
Therefore, it is a challenge to form reliable semiconductor devices with smaller and smaller dimensions

Method used

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  • Semiconductor device structure
  • Semiconductor device structure
  • Semiconductor device structure

Examples

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Embodiment Construction

[0057] The following disclosure provides many different embodiments or examples to implement different characteristic components of the present invention. The following disclosure content is a specific example describing each component and its arrangement, in order to simplify the disclosure content. Of course, these are only examples and are not intended to limit the present invention. For example, if the following disclosure describes that a first characteristic component is formed on or above a second characteristic component, it means that the formed first characteristic component and the second characteristic component are directly formed. The contacting embodiment also includes an implementation in which additional characteristic parts can be formed between the first characteristic part and the second characteristic part, so that the first characteristic part and the second characteristic part may not be in direct contact example. In addition, the content of the disclos...

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Abstract

A semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The conductive shielding layer has a plurality of openings, and a maximum width of the openings is less than a wavelengthof energy generated by the first device.

Description

Technical field [0001] The embodiment of the present invention relates to a semiconductor technology, and more particularly to a semiconductor device structure and a manufacturing method thereof. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced multiple generations of ICs. Each generation of ICs has smaller and more complex circuits than the previous generation of ICs. However, these advances have also increased the complexity of processing and manufacturing ICs. [0003] In the process of IC evolution, the functional density (that is, the number of interconnected devices per chip area) has generally increased, while the geometric size (that is, the smallest component (or line) that can be produced using a manufacturing process) has decreased. This scaling down process usually brings benefits due to increased production efficiency and related cost reducti...

Claims

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Application Information

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IPC IPC(8): H01L23/58
CPCH01L24/19H01L24/20H01L25/105H01L2224/73259H01L2225/1035H01L2225/1041H01L2225/1058H01L2924/3025H01L23/552H01L2224/04105H01L2224/12105H01L2924/15311H01L2924/18162H01L2224/16227H01L2224/16225H01L21/485H01L21/4853H01L21/4857H01L21/486H01L21/565H01L23/3114H01L23/5382H01L23/5383H01L23/5384H01L23/5386H01L23/5389H01L25/0657H01L25/50H01L2225/06537H01L2225/06555
Inventor 张守仁普翰屏黄启铭潘信瑜吴凯强许森贵万厚德
Owner TAIWAN SEMICON MFG CO LTD
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