Neuron-like all-optical memory device based on Ge2Sb2Te5

Abstract

The invention discloses a neuron-like all-optical memory device based on Ge2Sb2Te5, and belongs to the technical field of picosecond laser application. The neuron-like all-optical memory device is based on a multi-pulse action and an STDP neural memory theory. The amorphous Ge2Sb2Te5 is coupled with optical waveguide. Ge2Sb2Te5 is attached to the optical waveguide by a way of magnetron sputtering,and a coupling region is a bionic neural synaptic cleft. The device can realize the reading, memory and erasing processes of the device through all-optical signals. Moreover, the refractive index ofcrystalline Ge2Sb2Te5 is higher than that of amorphous Ge2Sb2Te5, so the material after crystallization is easier to deflect to the direction of Ge2Sb2Te5 than that of amorphous light, the informationretention in the memory region is facilitated, and the device continuously strengthens recording in use.

Description

technical field

[0001] The invention relates to a bionic memory device based on a phase-change material Ge2Sb2Te5, which uses a picosecond laser as an energy and signal generation source, and belongs to the technical field of picosecond laser applications. Background technique

[0002] In computer science, computers make extensive use of Neumann structures. That is, the input information is coded by the CPU, stored in a certain location of the memory, and the information is extracted from the memory when the data is used, which causes information to frequently go back and forth between the CPU and the memory. Due to the limitation of the bandwidth between the memory and the CPU, the computing speed of the CPU is much faster than the speed of information going back and forth between the memory and the CPU, resulting in a decrease in the actual computing speed and an increase in power consumption. This is called the Neumann bottleneck. When performing simple calculations that...

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