Silicon-based optical detector array structure

Abstract

The invention provides a silicon-based optical detector array structure. The silicon-based optical detector array structure comprises a plurality of silicon-based optical detector and deep grooves, wherein the plurality of silicon-based optical detectors are arranged in an array way, certain distance is kept among the silicon-based optical detectors, the deep grooves are arranged between adjacentsilicon-based optical detectors and are used for cutting optical current crosstalk path between adjacent silicon-based optical detectors. By forming the deep grooves between adjacent silicon-based optical detectors, the optical current crosstalk path between adjacent silicon-based optical detectors can be cut, so that optical current crosstalk between adjacent silicon-based optical detectors is reduced or eliminated, an optical current of the silicon-based optical detector arranged at an edge of the silicon-based optical detector array structure is approximate to an optical current of the silicon-based optical detector arranged in the center of the silicon-based optical detector array structure.

Description

technical field [0001] The invention belongs to the technical field of photodetection, in particular to a silicon-based photodetector array structure. Background technique [0002] The existing silicon-based photodetector array structure such as figure 1 As shown, the silicon-based photodetector array includes a plurality of silicon-based photodetectors 1 distributed in an array, and the silicon-based photodetectors 1 are separated by a certain distance. However, since the photocurrent is generated in the intrinsic semiconductor layer between and below the silicon-based photodetectors 1, there is a problem of photocurrent crosstalk between adjacent silicon-based photodetectors 1: that is, when the light is uniformly incident , the photocurrent of the two silicon-based photodetectors 1 located at the outermost edge of the silicon-based photodetector array structure is significantly smaller than the photocurrent of the silicon-based photodetector 1 located in the center, as ...

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a silicon-based photodetector array structure, which is used to solve the gap between adjacent silicon-based photodetectors in the silicon-based photodetector array structure in the prior art. The problem that the photocurrent of the silicon-based photodetector at the outermost edge is significantly smaller than that of the silicon-based photodetector at the center due to photocurrent crosstalk between

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