Preparation method of metal complex OLED (organic light emitting diode) main material
A technology of metal complexes and host materials, applied in luminescent materials, indium organic compounds, platinum group organic compounds, etc., can solve problems such as insufficient quantum efficiency, poor material shape stability, and inability to meet the requirements of blue or white light devices. The effect of improving electron transport performance, reducing efficiency roll-off, and excellent charge transport balance
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Embodiment 1
[0019] A method for preparing a metal complex OLED host material, the preparation technical scheme is as follows:
[0020] According to the mass parts, 14.7 parts of metal salts, 50.4 parts of organic ligand molecules, 130 parts of solvents and 50 parts of purified water were added to the reaction kettle, vacuumed, and the air was replaced with high-purity nitrogen, and repeated three times; Under the protection of high-purity nitrogen, the temperature is controlled at 138°C, and the reaction is refluxed for 28 hours; after the reaction is completed, cool to room temperature, add 200 parts of purified water to the system, then filter, wash with purified water and ethanol three times, and then dry to obtain a dimer ; The obtained dimer is added to the reactor, and then 35.8 parts of potassium carbonate, 18.6 parts of 3-fluoro-2-pyridinecarboxylic acid, 0.05 part of 3,7-diketone-5B-cholestane-24 are added -acid, 0.05 parts of cesium tetraphenylborate, 0.02 parts of 1-(dimethylis...
Embodiment 2
[0028] A method for preparing a metal complex OLED host material, the preparation technical scheme is as follows:
[0029] According to the number of parts by mass, 12.6 parts of metal salts, 45.6 parts of organic ligand molecules, 100 parts of solvents and 40 parts of purified water were added to the reaction kettle, vacuumed, and the air was replaced with high-purity nitrogen, and repeated three times; Under the protection of high-purity nitrogen, the temperature is controlled at 135°C, and the reaction is refluxed for 24 hours; after the reaction is completed, cool to room temperature, add 180 parts of purified water to the system, then filter, wash with purified water and ethanol three times, and then dry to obtain a dimer ; The obtained dimer is added to the reactor, and then 32.6 parts of potassium carbonate, 15.2 parts of 3-fluoro-2-pyridinecarboxylic acid, 0.01 part of 3,7-diketone-5B-cholestane-24 are added -acid, 0.01 part of cesium tetraphenylborate, 0.01 part of 1-...
Embodiment 3
[0037] A method for preparing a metal complex OLED host material, the preparation technical scheme is as follows:
[0038] According to the mass parts, 16.7 parts of metal salts, 55.4 parts of organic ligand molecules, 150 parts of solvents and 60 parts of purified water were added to the reaction kettle, vacuumed, and the air was replaced with high-purity nitrogen, and repeated three times; Under the protection of high-purity nitrogen, the temperature is controlled at 140°C, and the reaction is refluxed for 30 hours; after the reaction is completed, cool to room temperature, add 220 parts of purified water to the system, then filter, wash with purified water and ethanol three times, and then dry to obtain a dimer ; The obtained dimer is added to the reactor, and then 36.8 parts of potassium carbonate, 20.6 parts of 3-fluoro-2-pyridinecarboxylic acid, 0.06 parts of 3,7-diketone-5B-cholestane-24 are added -acid, 0.08 parts of cesium tetraphenylborate, 0.06 parts of 1-(dimethyli...
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