The invention relates to a
Gunn diode with
a diamond-
graphene composite heat dissipation structure and a preparation method of the
Gunn diode. The
Gunn diode comprises a substrate layer; the buffer layer is located on the upper surface of the substrate layer; the channel layer is located on the upper surface of the buffer layer; the first cap layer is located on one side of the upper surface of the channel layer; the
passivation layer is located on the upper surface of the channel layer, and one side of the
passivation layer abuts against the first cap layer; the
diamond heat dissipation layer is located on the upper surface of the
passivation layer; the second cap layer is located on the side, away from the first cap layer, of the passivation layer; the
cathode and the
anode are respectively positioned on the upper surfaces of the first cap layer and the second cap layer; and the
graphene layer covers the upper surfaces of the
diamond heat dissipation layer, the
anode and the channel layer. According to the method, heat accumulation in the Gunn
diode can be greatly reduced, the heat dissipation performance is remarkably improved, the temperature generated in the working period is reduced, the probability that the working efficiency is reduced due to the
heat effect is effectively reduced, and the service life of the Gunn
diode is prolonged.