LED structure and manufacturing method thereof

Abstract

The embodiment of the invention discloses an LED structure and a manufacturing method thereof. The method includes the following steps: providing a graphical substrate; forming a buffer layer on the surface of the substrate by using a physical vapor deposition process, wherein the buffer layer includes a hydrogen-containing aluminum nitride buffer layer; and forming an epitaxial structure on one side of the buffer layer facing away from the substrate. Thereby, the problem that in an existing LED structure manufacturing method, after the aluminum nitride buffer layer is formed, many aluminum residues still exist in a reaction chamber, the crystal quality of the subsequently formed epitaxial structure is affected, and the photoelectric performance of an LED device is reduced can be solved; the lattice stress between the substrate and the epitaxial structure can also be improved, so that the surface temperature field of the epitaxial structure of an LED can be uniform, the uniformity of the wavelength of the light emitted by the LED structure can be greatly improved, and meanwhile, the quantum-confined Stark effect on quantum wells can be reduced, so that the luminous performance of the finally formed LED can be improved, the brightness can be increased, and the leakage current can be reduced.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to an LED structure and a manufacturing method thereof. Background technique [0002] LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It is widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. [0003] In the current LED manufacturing process, usually before forming an epitaxial structure on the substrate, an aluminum nitride buffer layer is formed on the surface of the substrate to improve the photoelectric performance of the LED device, increase the production capacity of the LED device, and reduce the cost. [0004] The existing method of forming an aluminum nitride buffer layer on a substrate usually uses an organic chemical vapor deposition process to form an aluminum nitride buffer lay...

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Problems solved by technology

[0006] In order to solve the above-mentioned technical problems, the embodiment of the present invention provides an LED structure and its manufacturing method to solve the problem that in the existing LED manufacturing method, after the formation of the aluminum nitride buffer layer, there are still many aluminum residues in the reaction chamber. , affecting the crystal quality of the subsequently formed epitaxial structure, leading to the problem that the optoelectronic performance of the LED device is reduced

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