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Over voltage protection of a transistor device

A transistor, overvoltage technology, applied in transistors, emergency protection circuit devices, circuits, etc., can solve expensive and other problems

Active Publication Date: 2019-01-15
DIALOG SEMICON UK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But using such external parts is expensive

Method used

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  • Over voltage protection of a transistor device
  • Over voltage protection of a transistor device
  • Over voltage protection of a transistor device

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Embodiment Construction

[0039] Each transistor has a specific maximum voltage rating, which is the maximum channel voltage at which the manufacturer guarantees correct operation. The channel voltage is the voltage across the channel defined by the current-carrying terminals, denoted in the example of a FET as V DS (drain-source voltage) and is denoted Vce (collector-emitter voltage) in the example of a BJT.

[0040] Every circuit design consideration must be made to operate within the transistor's rated maximum channel voltage. Many conventional transistor devices, including metal-oxide-semiconductor field-effect transistors (MOSFETs), exhibit avalanche tolerance, meaning that when they are off, they will still conduct when the channel voltage reaches the avalanche voltage. The avalanche conduction of transistors acts to reduce the stress on transistors caused by high channel voltages and thus makes them less susceptible to high channel voltage conditions.

[0041] To illustrate this point, figure...

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Abstract

An over-voltage protection circuit for a transistor acts to switch on the transistor once a channel voltage exceeds a threshold and when the transistor is in an OFF state. This circuit acts to switchon the transistor achieved with internal components which are integrated with the transistor, avoiding the need for external diodes or Zener structures. The circuit has a transistor with a control terminal, a first current carrying terminal and a second current carrying terminal. The over-voltage protection circuit has a level shifter arranged to feed back a level-shifted version of a channel voltage between said first and second current carrying terminals to the control terminal. The level shifter allows the switching threshold voltage of the transistor to be crossed when a predetermined value of the channel voltage is crossed.

Description

technical field [0001] The present disclosure is in the field of electronic circuits. More specifically, the present disclosure relates to overvoltage protection of transistor devices. Background technique [0002] Transistor devices are electronic devices used to amplify or switch electrical signals or power. The transistor device comprises three electrodes called terminals, and the terminals include a control terminal and a first and a second current carrying terminal defining a current carrying channel therebetween. A voltage or current applied to one pair of terminals controls the current through the other pair of terminals; and a small current applied to the control terminals can control or switch a very large current between the current-carrying terminals. [0003] When used as a switch, the transistor is in the "on" state when current is flowing through the channel between the current-carrying terminals, and in the "off" state when current is prevented from flowing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/082
CPCH03K17/082H03K17/0822H03K17/0826H02H7/205H02H1/0007
Inventor 霍斯特·克内蒂格克里斯托夫·N·内戈尔内博伊沙·耶拉查
Owner DIALOG SEMICON UK