Class F power amplifier based on coupling loop resonant network

A technology of power amplifier and resonant network, which is applied in the field of radio frequency communication, can solve the problem of widening the limited bandwidth, and achieve the effects of low power loss, improved power amplifier efficiency, and wide degree of freedom in impedance matching

Pending Publication Date: 2019-04-16
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the consideration of the complexity of the circuit, the control of high-order harmonics is abandoned, which limits the improvement of its efficiency, which also limits the expansion of its bandwidth.

Method used

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  • Class F power amplifier based on coupling loop resonant network
  • Class F power amplifier based on coupling loop resonant network
  • Class F power amplifier based on coupling loop resonant network

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Embodiment Construction

[0030] The following are specific embodiments of the present invention and in conjunction with the accompanying drawings, the technical solutions of the present invention are further described, but the present invention is not limited to these embodiments.

[0031] In view of the defects existing in the existing technology, the applicant conducted an in-depth study on the structure of the existing Class F power amplifier, and found that the traditional harmonic control structure of the Class F power amplifier generally uses the series and parallel connection of stubs to realize the second harmonic The third harmonic is short-circuited and open-circuited, and due to the complexity of the circuit, only the third harmonic is generally controlled.

[0032] In order to achieve wide bandwidth and high efficiency, the present invention proposes a new type of harmonic control network, which realizes the control of high-order harmonics and realizes high efficiency while widening the ban...

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Abstract

The invention provides a class F power amplifier based on a coupling loop resonant network. The circuit comprises an input matching network, a gate, a drain bias circuit, a drain fundamental wave matching circuit network and a novel harmonic control network, wherein the bias circuit provides a stable working voltage for a transistor, the matching circuit network matches the source impedance and the load impedance of the transistor to 50 ohm respectively, and meanwhile performs waveform moulding on the voltage and current waveforms, so that the drain voltage of the transistor is a square wave,and the current is a half-sine wave, and then relatively high power and efficiency are obtained. Compared with the prior art, the class F power amplifier provided by the invention improves the harmonic control network of the class F power amplifier, is not limited to only control the second and third harmonics of the class F power amplifier, but increases the control order of the harmonics of theclass F power amplifier, thereby improving the working efficiency while further broadening the bandwidth of the amplifier.

Description

technical field [0001] The invention belongs to the field of radio frequency communication, and is applied in wireless communication fields such as mobile phone communication, electronic countermeasures, satellite communication, etc., in particular an ultra-wideband high-efficiency Class F power amplifier based on a coupling loop resonant network. technical background [0002] With the rapid development of wireless communication technology, radio frequency communication technology is becoming more and more important in people's daily life. The signal frequency of wireless communication is getting higher and higher, and the bandwidth is getting wider and wider. Therefore, in order to meet the requirements of high-speed and large-capacity transmission in today's and future mobile communications, the renewal of power amplifiers in wireless communication transmitter systems by communication companies is also necessary. It is more and more demanding, so a very complicated modulat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/02H03F3/19H03F3/217H03F3/24
CPCH03F1/0211H03F3/19H03F3/217H03F3/245H03F2200/451
Inventor 刘国华李素东程知群董志华张志维杨仁好陈艺朱艺超
Owner HANGZHOU DIANZI UNIV
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