Semiconductor light emitting element
A technology of light-emitting elements and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as the decrease of luminous efficiency
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no. 1 example
[0059] Figure 2A It is a schematic diagram of a semiconductor light emitting element 1A according to the first embodiment of the present application. The semiconductor light emitting element 1A includes an epitaxial structure 1, wherein the epitaxial structure 1 includes a first semiconductor stack 11, an active layer 10 and a second semiconductor stack 12; a front electrode 21 is located on the first semiconductor stack 11 The central position of the surface 11a forms an ohmic contact with the first semiconductor stack 11, and the part of the upper surface 11a of the first semiconductor stack 11 that is not covered by the front electrode 21 is a roughened surface for improving the light extraction rate; a second The ohmic contact structure 22 is located at the center of the lower surface 12a of the second semiconductor stack 12, and forms an ohmic contact with the second semiconductor stack 12; a reflective stack 3 is located on the lower surface 12a of the second semiconduc...
no. 2 example
[0067] Figure 4A and Figure 4B It is a schematic diagram of semiconductor light emitting devices 1B and 1C according to the second embodiment of the present application. The difference between the second embodiment and the first embodiment is that the epitaxial structure 1 includes a control layer 13, wherein as Figure 4A In the shown semiconductor light emitting element 1B, the control layer 13 can be located in the first semiconductor stack 11, or as Figure 4B In the illustrated semiconductor light emitting element 1C, the control layer 13 may be located in the second semiconductor stack 12 . The control layer 13 has a conductive region 13b and an oxidized region 13a, wherein the oxidized region 13a surrounds the conductive region 13b and is exposed on the side surface 1S of the epitaxial structure 1 . The material of the conductive region 13b can be conductive (Al x Ga 1-x )As, where 0.9y O, where 0 Figure 4C In another embodiment of the semiconductor light-emittin...
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