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Semiconductor light emitting element

A technology of light-emitting elements and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as the decrease of luminous efficiency

Active Publication Date: 2016-08-17
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the volume of the light-emitting diode shrinks, the influence of the non-radiative recombination effect (non-radiative recombination) becomes significant due to the lattice defects caused by etching on the side wall of the tube core, so that the luminous efficiency decreases.

Method used

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  • Semiconductor light emitting element
  • Semiconductor light emitting element
  • Semiconductor light emitting element

Examples

Experimental program
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no. 1 example

[0054] Figure 2A It is a schematic diagram of a semiconductor light emitting element 1A according to the first embodiment of the present application. The semiconductor light emitting element 1A includes an epitaxial structure 1, wherein the epitaxial structure 1 includes a first semiconductor stack 11, an active layer 10 and a second semiconductor stack 12; a front electrode 21 is located on the first semiconductor stack 11 The central position of the surface 11a forms an ohmic contact with the first semiconductor stack 11, and the part of the upper surface 11a of the first semiconductor stack 11 that is not covered by the front electrode 21 is a roughened surface for improving the light extraction rate; a second The ohmic contact structure 22 is located at the center of the lower surface 12a of the second semiconductor stack 12, and forms an ohmic contact with the second semiconductor stack 12; a reflective stack 3 is located on the lower surface 12a of the second semiconduc...

no. 2 example

[0062] Figure 4A and Figure 4B It is a schematic diagram of semiconductor light emitting devices 1B and 1C according to the second embodiment of the present application. The difference between the second embodiment and the first embodiment is that the epitaxial structure 1 includes a control layer 13, wherein as Figure 4A In the shown semiconductor light emitting element 1B, the control layer 13 can be located in the first semiconductor stack 11, or as Figure 4B In the illustrated semiconductor light emitting element 1C, the control layer 13 may be located in the second semiconductor stack 12 . The control layer 13 has a conductive region 13b and an oxidized region 13a, wherein the oxidized region 13a surrounds the conductive region 13b and is exposed on the side surface 1S of the epitaxial structure 1 . The material of the conductive region 13b can be conductive (Al x Ga 1-x )As, where 0.9y O, where 0 Figure 4C In another embodiment of the semiconductor light-emittin...

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Abstract

The invention discloses a semiconductor light emitting element, which comprises an epitaxial stacked layer and a main light exiting surface, wherein the epitaxial stacked layer comprises a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer for generating a light wave; and the main light exiting surface is located on the first semiconductor layer, the light wave passes through the main light exiting surface, the main light exiting surface comprises a first light exiting area, a second light exiting area and a maximum near field light emitting intensity, the near field light emitting intensity distribution in the first light exiting area is between 70% and 100% of the maximum near field light emitting intensity, and the near field light emitting intensity distribution in the second light exiting area is between 0% and 70% of the maximum near field light emitting intensity.

Description

technical field [0001] The invention relates to a structural design of a light emitting diode. Background technique [0002] please see figure 1 , is a schematic diagram of an existing light-emitting diode 100 (light-emitting diode) structure, including a substrate 5b, an epitaxial structure 1b, and two electrodes 2 and 9b, wherein the epitaxial structure 1b includes a first semiconductor stack 11b, an organic The source layer 10b and a second semiconductor stack 12b, the electrode 2 is formed on the upper surface of the epitaxial structure 1b to connect to the external power supply through the metal wire 2b, the electrode 9b is formed under the substrate 5b, the electrode 2 and the electrode 9b are used to conduct external The current flows through the active layer 10b to recombine the electron holes in the active layer 10b to release photons with a certain peak wavelength to make the LED 100 emit light. However, when the volume of the light-emitting diode shrinks, the la...

Claims

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Application Information

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IPC IPC(8): H01L33/26H01L33/06H01L33/48
Inventor 邱新智陈世益吕志强
Owner EPISTAR CORP