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Problems solved by technology
[0008] The inventors of the present invention have found that there is a problem in the defect suppression performance after examining the photoresist solution produced by the production method described in Patent Document 1.
Method used
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Embodiment 1
[0261] 1 L of commercially available PGMM was prepared, and the stabilizer was removed by distillation. 3.0 mass ppm of BHT (Butylated hydroxytoluene, equivalent to a stabilizer.) was added to the distilled PGMM, and this was made into the object to be purified. The content of organic solvent, stabilizer, water and metal impurities in the purified product was measured by the method described later. Table 1 shows the type and content of the organic solvent, the type and content of the stabilizer, the water content, and the content of each type of metal impurities.
[0262] Then, the product to be purified was purified by the method described later to obtain a drug solution. The contents of various types of metal impurities in the chemical solution were measured in the same manner as above, and are shown in Table 1. In addition, the defect suppression performance of the chemical solution was measured by the method described later, and the results are shown in Table 1.
Embodiment 1～51、 comparative example 1 and 2
[0264] In addition to using a commercially available organic solvent (or a mixture thereof) described in Table 1 instead of PGMM, and adding the stabilizer described in Table 1 in the amount described in Table 1 instead of 3.0 mass ppm of BHT and the Purification Method Except that the product to be purified was purified, a drug solution was obtained in the same manner as in Example 1, and the defect suppression performance of the drug solution was evaluated. The results are shown in Table 1.
[0265] In addition, each abbreviation in Table 1 represents the following organic solvent or stabilizer.
[0354] [Example 1A: Preparation of resist composition (actinic radiation-sensitive or radiation-sensitive composition)]
[0355] A resist composition for EUV obtained by mixing the following components was prepared.
[0356] Resin: A-2 0.79g
[0357] ・Acid generator: B-2 0.18g
[0358] ・Basic compound: E-1 0.03g
[0359] Solvent: 75g of the medicinal solution of Example 1
[0360] Resin A-2 is a resin composed of units represented by the following formula.
[0361] [chemical formula 8]
[0362]
[0363] Moreover, content of each said unit in resin A-2 was 30:60:10 from left to right in molar ratio. The weight average molecular weight was 12300, and Mw / Mn was 1.51.
[0364] The acid generator B-2 is a compound represented by the following formula.
[0365] [chemical formula 9]
[0366]
[0367] Basic compound E-1 is a compound represented by the following formula.
[0368] [chemical formula 10]
[0369]
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PUM
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Abstract
The present invention addresses the problem of providing a drug solution purification method with which it is possible to obtain a drug solution exhibiting excellent impairment suppression performance. The present invention also addresses the problem of providing a drug solution. The drug solution purification method according to the present invention is for obtaining a drug solution through filtration of a to-be-purified material containing an organic solvent, wherein the contained amount of a stabilizing agent in the to-be-purified material is not less than 0.1 ppm by mass but less than 100ppm by mass with respect to the total mass of the to-be-purified material.
Description
technical field [0001] The invention relates to a method for purifying medicinal liquid and the medicinal liquid. Background technique [0002] When manufacturing semiconductor devices through the wiring formation process including photolithography, as a pre-wet solution, resist solution, developer solution, rinse solution, stripping solution, chemical mechanical polishing (CMP: Chemical Mechanical Al Polishing) slurry and after CMP Chemical solutions containing solvents (typically organic solvents) are being used for cleaning fluids, etc. In recent years, research and manufacture of semiconductor devices below the 10nm node have strongly required a method to prevent particles from adhering to semiconductor wafers, and also require that the above-mentioned chemical solution is not easy to attach particles to semiconductor wafers in each process. [0003] Therefore, as the above-mentioned chemical solution, a substance to be purified (for example, a substance to be purified ...
Claims
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