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Solution, solution accommodating body, active light-sensitive or radiation-sensitive resin composition, pattern formation method, and method for producing semiconductor devices

A technology for semiconductors and organic compounds, which is applied in the manufacture of semiconductor/solid-state devices, exposure devices for photoengraving processes, and photoengraving processes for patterned surfaces, and can solve problems such as defects in semiconductor devices.

Active Publication Date: 2019-04-19
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the manufacturing process of the above-mentioned semiconductor device, defects in the semiconductor device are also caused by the incorporation of coarse particles with a size of several micrometers, etc.

Method used

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  • Solution, solution accommodating body, active light-sensitive or radiation-sensitive resin composition, pattern formation method, and method for producing semiconductor devices
  • Solution, solution accommodating body, active light-sensitive or radiation-sensitive resin composition, pattern formation method, and method for producing semiconductor devices
  • Solution, solution accommodating body, active light-sensitive or radiation-sensitive resin composition, pattern formation method, and method for producing semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0756] (Synthesis Example 1) Synthesis of Resin (A-1)

[0757] 600 g of cyclohexanone was added to the 2L flask, and nitrogen substitution was performed at a flow rate of 100 mL / min for one hour. Then, 4.60 g (0.02 mol) of polymerization initiator V-601 (made by Wako Pure Chemical Industries, Ltd.) was added, and it heated up until internal temperature became 80 degreeC. Next, 4.60 g (0.02 mol) of the following monomers and a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) were dissolved in 200 g of cyclohexanone to prepare a monomer solution. The monomer solution was added dropwise to the above-mentioned flask heated to 80° C. over 6 hours. After completion|finish of dripping, it was made to react at 80 degreeC for 2 hours further.

[0758] 4-Acetoxystyrene 48.66g (0.3mol)

[0759] 1-Ethylcyclopentyl methacrylate 109.4g (0.6mol)

[0760] Monomer 1 22.2g (0.1mol)

[0761] [chemical formula 44]

[0762]

[0763] The reaction solutio...

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Abstract

The present invention addresses the problem of providing a solution which includes, as a main component (at least 98 mass%), an organic solvent, and which exhibits an excellent ability to inhibit defects. The present invention also addresses the problem of providing: a solution accommodating body in which the solution is accommodated; an active light-sensitive or radiation-sensitive resin composition including the solution; and a pattern formation method and a method for producing semiconductor devices which use the solution. This solution is provided with at least one organic solvent having aboiling point of less than 200 DEG C, and an organic impurity having a boiling point of at least 250 DEG C. The organic solvent content is at least 98 mass% of the total mass of the solution. The organic impurity content is at least 0.1 ppm by mass but less than 100 ppm by mass with respect to the total mass of the solution.

Description

technical field [0001] The present invention relates to a solution containing an organic solvent as a main component (98% by mass). Furthermore, the present invention relates to a solution container containing the above-mentioned solution, an actinic radiation-sensitive or radiation-sensitive resin composition containing the above-mentioned solution, a pattern forming method using the above-mentioned solution, and a method of manufacturing a semiconductor device. Background technique [0002] Conventionally, in the manufacturing steps of semiconductor devices such as IC (Integrated Circuit, integrated circuit) and LSI (Large Scale Integrated Circuit, large scale integrated circuit), microfabrication by photolithography using a photoresist composition has been performed. In recent years, along with the high integration of integrated circuits, ultrafine pattern formation in submicron regions and quarter micron regions has come to be required. Along with this, the exposure wav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16G03F7/004G03F7/038G03F7/039G03F7/32H01L21/027
CPCG03F7/16G03F7/325G03F7/0392G03F7/0012G03F7/0048G03F7/0044G03F7/0046G03F7/0757G03F7/0397G03F7/004G03F7/0043G03F7/0045G03F7/038G03F7/039G03F7/20G03F7/32H01L21/027G03F7/162G03F7/168G03F7/2006G03F7/2041G03F7/38H01L21/0274
Inventor 上村哲也
Owner FUJIFILM CORP