A kind of ceramic casing for encapsulating power metal oxide half-field-effect transistor and its preparation method
A metal-oxygen semi-field and ceramic shell technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc. Good performance, small welding space, meet the effect of miniaturized packaging
Active Publication Date: 2021-06-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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[0004] The purpose of the present invention is to provide a ceramic case for encapsulating a power metal oxide half field effect transistor and a preparation method thereof, aiming at solving the problem of large packaging size of a power metal oxide half field effect transistor in the prior art
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[0035] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0036] see figure 1 Now, a ceramic case for encapsulating a power metal-oxide-semiconductor field-effect transistor 7 provided by the present invention will be described. Said ceramic housing for encapsulating a power metal oxide half-field-effect transistor 7 includes a ceramic part 1 formed by laminating multilayer ceramic plates 10, a back electrode 3 affixed to the back of the ceramic part 1, and a back electrode 3 affixed to the ceramic part 1. The metal wall 2 on the top surface, and the cover 6 fixed on the top surface of the metal wall 2; wherein, each lay...
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Abstract
The invention provides a ceramic case for encapsulating a power metal-oxygen-semiconductor field-effect transistor and a preparation method thereof, belonging to the technical field of ceramic encapsulation, comprising a ceramic part formed by stacking multilayer ceramic plates, a back electrode fixedly connected to the back of the ceramic part, The metal wall fixed on the top surface of the ceramic part, and the cover fixed on the top surface of the metal wall; wherein, each layer of ceramic plate is printed with a metal buried layer, and the metal buried layers are connected in parallel The internal bonding finger is provided on the ceramic part, and the internal bonding finger is integrally formed with the metal buried layer, and is used for electrical connection with the power metal oxide half field effect transistor; the back electrode is electrically connected with the metal buried layer; the cover is connected with the metal The wall and the ceramic parts together form an airtight cavity for accommodating power metal oxide half field effect transistors. The ceramic case for encapsulating a power metal oxide half field effect transistor provided by the present invention has low on-resistance and requires a small welding space for backside electrode welding, and can meet the miniaturization packaging requirements of the power metal oxide half field effect transistor.
Description
technical field [0001] The invention belongs to the technical field of ceramic encapsulation, and more specifically relates to a ceramic shell for encapsulating a power metal-oxygen-semiconductor field-effect transistor and a preparation method thereof. Background technique [0002] High-reliability packages for power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) are all in the form of ceramic packages, and conventional ceramic packages use The method of embedding metal electrodes after digging the ceramic cavity meets the requirements of high transmission current and low transmission path resistance of the power MOSFET. [0003] Due to the method of embedding metal electrodes in the ceramic cavity, a certain welding space is required outside the ceramic to meet the requirements of hermetic packaging. For a package with multiple electrodes, in order to meet the requirements of airtightness, there needs to be a...
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IPC IPC(8): H01L23/02H01L23/043H01L21/48
CPCH01L21/4817H01L23/02H01L23/043
Inventor 李明磊刘林杰高岭乔志壮
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP