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A contact pad for three-dimensional memory device and method of manufacturing same

A technology of contact pads and memory, applied in the field of three-dimensional memory devices and their manufacturing, can solve problems such as inability to receive hydrogen

Pending Publication Date: 2021-04-30
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the polysilicon layer of the first array device disposed under the second array structure may not receive enough hydrogen for defect repair

Method used

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  • A contact pad for three-dimensional memory device and method of manufacturing same
  • A contact pad for three-dimensional memory device and method of manufacturing same
  • A contact pad for three-dimensional memory device and method of manufacturing same

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Embodiment Construction

[0026] Technical solutions according to various aspects of the present disclosure are described below with reference to the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Obviously, the described aspects are only some, but not all, of the aspects of the disclosure. Features in various aspects may be exchanged and / or combined.

[0027] Figure 1-Figure 11 A fabrication process of an exemplary 3D memory device 100 according to aspects of the present disclosure is schematically shown. The 3D array device 100 is a part of a memory device, and may also be referred to as a 3D memory structure. In these figures, the top view is in the X-Y plane, and the cross-sectional view is in the Y-Z plane.

[0028] Such as figure 1 As shown in the cross-sectional view in , the 3D array device 100 includes a substrate 110 . In some aspects, substrate 110 may include a single crystal silicon layer....

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PUM

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Abstract

Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a manufacturing method includes: preparing a stacked device having a first array device and a second array device; forming an opening on a back side of the second array device; and forming one or more contact pads in the opening. The first array device includes a first front pad on a face side of the first array device and a first back pad on a back side of the first array device. The second array device includes a second front pad on a face side of the second array device and bonded to the first back pad. One or more contact pads are disposed at a level proximate to the second front pad relative to the first array device.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] NAND memory is a non-volatile type of memory that does not require power to retain stored data. Growing demand for consumer electronics, cloud computing, and big data has created a persistent need for higher capacity and better performance NAND memory. As conventional two-dimensional (2D) NAND memory approaches its physical limits, three-dimensional (3D) NAND memory now plays an important role. 3D NAND memory uses multiple stacked layers on a single die to achieve higher density, higher capacity, faster performance, lower power consumption and better cost efficiency. [0003] A 3D NAND memory device may include a peripheral device, a first array device, and a second array device that are stacked together. For example, a peripheral device may be arran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11565H01L27/1157H01L27/11573H01L27/11582
CPCH10B43/10H10B43/40H10B43/35H10B43/27H01L25/0657H01L25/50H01L2225/06541H01L2225/06527H01L2224/08145H01L24/08H01L2224/08058H01L2224/09517H01L24/07H01L24/80H01L2224/08123H01L2224/80895H01L2224/80896H01L2924/1431H01L2924/14511H10B41/27
Inventor 陈赫肖亮王永庆伍术
Owner YANGTZE MEMORY TECH CO LTD