Sensitive amplifier, memory and control method

Abstract

The invention provides a sensitive amplifier, a memory and a control method, and the sensitive amplifier comprises: an amplification module which is used for amplifying a voltage difference between a bit line and a reference bit line when the sensitive amplifier is in an amplification stage; a write-in module whcih is connected with the bit line and the reference bit line and used for pulling the voltage difference between the bit line and the reference bit line according to the data to be written in when the sensitive amplifier is in the write-in stage; and a controllable power supply module which is connected with the amplification module and is used for providing a first voltage for the amplification module when the sensitive amplifier is in a non-write-in stage and providing a second voltage for the amplification module when the sensitive amplifier is in a write-in stage, wherein the second voltage is smaller than the first voltage, and the second voltage is in positive correlation with the driving capability of the write-in module. According to the scheme, the capabilities of the write-in module and the amplification module for pulling the voltage of the bit line and the reference bit line are balanced in the write-in stage, and data can be written into the storage unit through the bit line and the reference bit line when the driving capability of the write-in module is relatively weak.

Description

technical field [0001] The present application relates to the field of integrated circuits, and more specifically, to a sense amplifier, a memory and a control method. Background technique [0002] With the popularity of electronic devices such as mobile phones, tablets, and personal computers, semiconductor memory technology has also developed rapidly. [0003] A sense amplifier (Sense Amplifier for short: SA) is an important part of a semiconductor memory, and its main function is to amplify a small signal on a bit line to perform a read or write operation. The sense amplifier includes a writing circuit and an amplifying circuit. When writing data into the memory cell, both the writing circuit and the amplifying circuit will pull the voltage of the bit line and the voltage of the reference bit line. [0004] However, if the drive capability of the write circuit is weaker than that of the amplifier circuit, the write circuit cannot pull the voltage of the bit line and the ...

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Problems solved by technology

[0004] However, if the drive capability of the write circuit is weaker than that of the amplifier circuit, the write circuit cannot pull the voltage of the bit line and the voltage of the reference bit line according to the data to be written, so that the sense amplifier cannot be reversed, resulting in failure to write data

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