Sensitive amplifier, memory and control method

Abstract

The present application provides a sense amplifier, a memory and a control method. The sense amplifier includes: an amplification module, used to amplify the voltage difference between the bit line and the reference bit line when the sense amplifier is in the amplification stage; It is connected with the reference bit line, and is used to pull the voltage difference between the bit line and the reference bit line according to the data to be written when the sense amplifier is in the writing stage; the controllable power supply module is connected with the amplification module, and is used for During the non-writing stage, the first voltage is provided to the amplifying module, and when the sense amplifier is in the writing stage, the second voltage is provided to the amplifying module; wherein, the second voltage is less than the first voltage, and the second voltage is the same as that of the writing module drive ability is positively correlated. This solution balances the ability of the writing module and the amplifying module to pull the voltage of the bit line and the reference bit line during the writing phase, so as to ensure that data can be written into the storage unit through the bit line and the reference bit line even when the driving ability of the writing module is weak .

Description

technical field [0001] The present application relates to the field of integrated circuits, and more particularly, to a sense amplifier, a memory and a control method. Background technique [0002] With the popularization of electronic devices such as mobile phones, tablets, and personal computers, semiconductor memory technology has also developed rapidly. [0003] The Sense Amplifier (SA for short) is an important part of the semiconductor memory. Its main function is to amplify the small signal on the bit line, and then perform read or write operations. The sense amplifier includes a writing circuit and an amplifying circuit. When writing data into a memory cell, the writing circuit and the amplifying circuit both pull the voltage of the bit line and the voltage of the reference bit line. [0004] However, if the drive capability of the write circuit is weaker than the drive capability of the amplifier circuit, the write circuit cannot pull the voltage of the bit line an...

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Problems solved by technology

[0004] However, if the drive capability of the write circuit is weaker than that of the amplifier circuit, the write circuit cannot pull the voltage of the bit line and the voltage of the reference bit line according to the data to be written, so that the sense amplifier cannot be reversed, resulting in failure to write data

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