Solid-state imaging device
A solid-state imaging device and semiconductor technology, which can be used in electric solid-state devices, radiation control devices, transistors, etc., can solve problems such as spectral sensitivity wavelength deviation, and achieve the effect of reducing sensitivity deviation.
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no. 1 Embodiment approach
[0055] image 3 It is an enlarged plan view of main parts showing a part of the photosensitive region of the solid-state imaging device according to the first embodiment. image 3 In , the insulating film 30 is omitted for convenience of description, while the XYZ axes are shown. The x-axis is corresponding to figure 1 The axis in the 2nd direction, the Y axis is corresponding to figure 1 The axis of the first direction in . The Z axis is an axis corresponding to the thickness direction of the semiconductor substrate 20 . in addition, Figure 4 yes image 3 The cross-sectional view at the specified position in . image 3 (a) is the X1-X1 line sectional view, image 3 (b) is the X2-X2 line sectional view, image 3 (c) is the X3-X3 line sectional view, image 3 (d) is the X4-X4 line sectional view, image 3 (e) is a Y-Y line sectional view.
[0056] Such as image 3 and Figure 4 As shown, in the photosensitive region 3 , on the main surface 20 a of the semiconducto...
no. 2 Embodiment approach
[0075] Figure 10 It is an enlarged plan view of main parts showing a part of the photosensitive area of the solid-state imaging device according to the second embodiment. in addition, Figure 11 yes Figure 10 The cross-sectional view at the specified position in . Such as Figure 10 and Figure 11 As shown, in the second embodiment, each of the various types of bottom surfaces RA to RD is defined by a single recess P. As shown in FIG. That is, in this form, the recesses P are not separated from each other, and one recess P includes bottom surfaces R having a plurality of depths. Moreover, when the main surface 20a is planarly viewed, the bottom surfaces R having different depths are continuous in the first direction, and the bottom surfaces R having the same depth are continuous in the second direction.
[0076] More specifically, in this aspect, with respect to the first direction, one arrangement pattern is formed in the order of bottom surface RA, bottom surface R...
no. 3 Embodiment approach
[0079] Figure 12 It is an enlarged plan view of main parts showing a part of the photosensitive region of the solid-state imaging device according to the third embodiment. in addition, Figure 13 yes Figure 12 The cross-sectional view at the specified position in . Such as Figure 12 and Figure 13 As shown, in the third embodiment, as in the first embodiment, each of the various types of bottom surfaces RA to RD is defined by the various types of recesses PA to PD. In addition, when the main surface 20a is planarly viewed, the recesses P having different depths are arranged separately from each other in the first direction, and the recesses P having the same depth are arranged separately from each other in the second direction.
[0080] The arrangement pattern of the recesses PA to PD in the first direction, the depths ZA to ZD of the bottom surfaces RA to RD, and the opening widths LA to LD of the recesses PA to PD are all the same as those of the first embodiment. I...
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Abstract
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