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Semiconductor arrangement and method for producing the same

A semiconductor, horizontal technology, used in semiconductor devices, semiconductor/solid-state device components, electrical solid-state devices, etc., can solve problems such as the negative impact of connection stability

Pending Publication Date: 2021-08-03
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, components may be exposed to stress or tension that may negatively affect the stability of the connection and thus the performance and overall lifetime of the semiconductor device

Method used

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  • Semiconductor arrangement and method for producing the same
  • Semiconductor arrangement and method for producing the same
  • Semiconductor arrangement and method for producing the same

Examples

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Embodiment Construction

[0014] In the following Detailed Description, reference is made to the accompanying drawings. The drawings show specific examples in which the invention may be practiced. It should be understood that the features and principles described with respect to the various examples may be combined with each other unless specifically stated otherwise. In the description and claims, designation of certain elements as "first element", "second element", "third element" and the like is not to be construed as enumeration. Rather, such designations are merely used to refer to various "elements." That is, for example, the presence of the "third element" does not require the presence of the "first element" and the "second element". Wires and electrical connections may comprise metallic and / or semiconducting materials, and may be permanently conductive (ie, non-switchable). A semiconductor body or a controllable semiconductor element as described herein may be made of a (doped) semiconductor...

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Abstract

A semiconductor arrangement comprises a controllable semiconductor element comprising an active region, and a plurality of bonding wires arranged in parallel to each other in a first horizontal direction. The active region has a first length in the first horizontal direction and a first width in a second horizontal direction perpendicular to the first horizontal direction. Each of the plurality of bonding wires is electrically and mechanically coupled to the controllable semiconductor element by means of a first number of bond connections, wherein each of the first number of bond connections is arranged above the active region in a vertical direction that is perpendicular to the first horizontal direction and the second horizontal direction. A first bond connection of each of the plurality of bonding wires is arranged at a first distance from a first edge of the active region in the first horizontal direction, and a second bond connection of each of the plurality of bonding wires is arranged at a second distance from a second edge of the active region in the first horizontal direction, wherein the second edge is arranged opposite the first edge.

Description

technical field [0001] The present disclosure relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Power semiconductor module arrangements often include at least one semiconductor substrate arranged in a housing. A semiconductor arrangement comprising a plurality of controllable semiconductor elements (eg two IGBTs in a half-bridge configuration) is arranged on each of the at least one substrate. Each substrate generally includes a substrate layer (eg, a ceramic layer), a first metallization layer deposited on a first side of the substrate layer, and a second metallization layer deposited on a second side of the substrate layer. For example, controllable semiconductor components are mounted on the first metallization layer. A second metallization layer may optionally be attached to the substrate. Controllable semiconductor devices are usually mounted on semiconductor substrates by soldering or sintering techniques. Furth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/049H01L25/07H01L23/49
CPCH01L23/049H01L25/072H01L23/49H01L2224/4846H01L2224/49175H01L2224/73265H01L2224/48472H01L2224/45014H01L2224/8384H01L2224/29339H01L2224/29101H01L2224/83801H01L2224/8385H01L24/49H01L2924/00014H01L2224/32225H01L2224/48227H01L23/3735H01L2924/181H01L23/24H01L2924/13055H01L2224/85424H01L2224/83424H01L2224/85447H01L2224/83447H01L2924/16195H01L2924/171H01L2924/13062H01L2924/13091H01L2924/13064H01L24/29H01L24/32H01L24/73H01L24/83H01L24/48H01L2224/92247H01L24/92H01L24/85H01L2224/4809H01L23/49811H01L23/053H01L2924/014H01L2924/0781H01L2224/45099H01L2924/00012H01L2224/05599H01L2924/00H01L2224/48091H01L2224/49096H01L2224/4918
Inventor F·绍尔兰德
Owner INFINEON TECH AG
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