Chemically sensitive sensor comprising micro-barrier and method of fabrication thereof
A chemically sensitive, sensor technology, applied in chemical instruments and methods, inorganic chemistry, scientific instruments, etc., can solve the problems of complicated sensor manufacturing process, reduced solvent evaporation rate, infeasibility, etc.
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example 1
[0209] Example 1: Fabrication of Chemically Sensitive Sensors
[0210] The sensor was designed to include eight electrode arrays, with eight micro-barriers disposed on the top surface of the solid substrate and surrounding each electrode array.
[0211] Electrode Array Fabrication
[0212] First, disk-shaped interdigitated platinum electrodes (circular interdigitated platinum electrodes) were fabricated on a silicon wafer including a 1 μm thermal silicon oxide film (purchased from Nova Electronic Materials, Inc., USA) by an electron beam evaporator (Evatec BAK501). The outer diameter of each electrode array is 1000 μm. The thickness of the electrodes is 10 μm, and every two adjacent electrodes are separated by a distance of 10 μm.
[0213] Micro-barrier preparation
[0214] A schematic representation of the SU-8 microbarrier preparation is shown in Figure 5 shown. SU-8 micro-barriers were fabricated using a photolithographic process in a clean room facility. A waf...
example 2
[0221] Example 2: Characterization of a dispersion of core-shell particles
[0222] The thiol-terminated Au NP dispersions were characterized using transmission electron microscopy (TEM). Samples for TEM were prepared by drop casting a diluted toluene solution at a ratio of 5:1 onto a 200-mesh carbon-coated copper grid. TEM images of thiol-terminated gold NPs were acquired at 120 kV (model FEITecnai T12 G2 TEM). Figure 7A-Figure 7B TEM images of thiol-terminated Au NP dispersions are shown, including dodecanethiol-terminated Au NP dispersions ( Figure 7A ) and 2-ethylhexanethiol-terminated Au NP dispersions ( Figure 7B ). Figure 7C-Figure 7D Shown is the analysis of the metal core size distribution of thiol-terminated Au NPs, including dodecanethiol-terminated Au NPs ( Figure 7C ) and 2-ethylhexanethiol-terminated Au NPs ( Figure 7D ). Transmission electron micrographs of thiol-terminated Au NPs confirm the narrow size distribution of dodecanethiol-terminated Au ...
example 3
[0223] Example 3: SiO 2 Microbarrier formulation (comparative example)
[0224] An additional sensor device was prepared comprising micro-barriers made of silicon oxide.
[0225] SiO 2 The micro-barriers are fabricated using a photolithographic process in a cleanroom facility. A wafer containing an array of eight electrodes (as described in Example 1) was heated by a hot plate at 120°C for 5 minutes. After the wafer had cooled to room temperature, photoresist AZ 2070 was coated by using a spinner (at 2000 rpm for 60 seconds). Then, the wafer was heated by a hot plate at 110 °C for 2 minutes, followed by a special mask at 14 mW / cm 2 Expose to UV light for 4 seconds at a certain intensity. Then, the photoresist was developed with TMAH developer for 1 min and washed with DI water. under vacuum and then in silane (SiH 4 ) and oxygen atmosphere at 1200 °C by a standard plasma-enhanced chemical vapor deposition system (PEVD Plasma-Therm, Vision 410) for SiO 2 The depositio...
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