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Three-dimensional memory device and forming method thereof

A storage device, three-dimensional technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problem of high cost

Active Publication Date: 2021-10-19
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly
As a result, the storage density of planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device and forming method thereof
  • Three-dimensional memory device and forming method thereof
  • Three-dimensional memory device and forming method thereof

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Embodiment Construction

[0027] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. Accordingly, other configurations and arrangements may be used without departing from the scope of the present disclosure. In addition, the present disclosure can also be used in various other applications. The functions and structural features as described in the present disclosure may be combined, adjusted and modified with each other in ways not specifically shown in the drawings, so that these combinations, adjusted and modified are within the scope of the present disclosure.

[0028] In general, a term can be understood, at least in part, from its usage in context. For example, the term "one or more" as used herein may be used to describe any feature, structure or characteristic in the singular sense or may be used to describe a feature, structure or combination of characteristics in the plural sense, depending at least in part on...

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Abstract

In certain aspects, a three-dimensional (3D) memory device includes a plurality of channel structures in a first region, a step structure in a second region, and word lines extending in the first region and the second region. The first region and the second region are arranged in a first direction. The word line is discontinuous between the first region and the second region in the first direction.

Description

technical field [0001] The present disclosure relates to a three-dimensional (3D) memory device and a method of manufacturing the same. Background technique [0002] Planar memory cells are shrunk to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripherals for controlling signals to and from the memory array. Contents of the invention [0004] In one aspect, a 3D memory device includes a plurality of channel structures in a first region, a ladder structure in a second region, and word lines extending in the first region and the secon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11548H01L27/11556H01L27/11575H01L27/11582H10B41/50H10B41/27H10B43/27H10B43/50
CPCH10B41/50H10B41/27H10B43/50H10B43/27H10B43/10H01L23/562H01L21/76816H01L21/76877H01L23/5226H01L23/5283
Inventor 张中王迪周文犀
Owner YANGTZE MEMORY TECH CO LTD