Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor structure and preparation method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its preparation, can solve the problems of reducing and increasing the reverse breakdown voltage, and the semiconductor structure cannot take into account the forward conduction voltage drop, etc., and achieves the improvement of reverse breakdown voltage, The effect of forward voltage drop reduction

Pending Publication Date: 2022-04-12
清纯半导体(宁波)有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the problem that the semiconductor structure in the prior art cannot take into account the reduction of the forward conduction voltage drop and the increase of the reverse breakdown voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof
  • Semiconductor structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0022] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a semiconductor substrate layer; the first drift layer is positioned on the semiconductor substrate layer; the second drifting layer is located on the surface of the side, away from the semiconductor substrate layer, of the first drifting layer, the conduction type of the second drifting layer is the same as that of the first drifting layer, and the doping concentration of the second drifting layer is larger than that of the first drifting layer; the doped protection region is located in the second drift layer, the conduction type of the doped protection region is opposite to that of the second drift layer, the doping concentration of the doped protection region is higher than that of the second drift layer, and the doped protection region and the top surface and the bottom surface of the second drift layer are arranged at intervals. According to the semiconductor structure, the forward conduction voltage drop is reduced, and the reverse breakdown voltage is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a preparation method thereof. Background technique [0002] Power diode is one of the most commonly used electronic components and the most basic unit of power electronic circuits. Its unidirectional conductivity can be used for rectification, clamping and freewheeling of circuits. The diode in the peripheral circuit mainly plays an anti-reverse function to prevent device damage caused by current reverse injection. Traditional power diodes mainly include Schottky power diodes (SBDs) and PN junction power diodes. Compared with PN junction power diodes, Schottky power diodes use metal-semiconductor contacts (gold-semi-contacts) to form metal-semiconductor junctions, making their forward turn-on voltage smaller. Moreover, the Schottky power diode is a unipolar majority carrier conduction mechanism, its reverse recovery time is ideally zero, and there is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739H01L29/872H01L21/329H01L21/331H01L21/336H01L29/786
Inventor 张清纯史文华李敏
Owner 清纯半导体(宁波)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com