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Trench type fast recovery diode and its preparation method

A recovery diode, trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as adverse effects, and achieve the effect of reducing injection, voltage drop, and reverse recovery time.

Active Publication Date: 2019-03-12
MACMIC SCIENCE & TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this will cause obvious hard recovery due to the small amount of trailing current provided for recovery, and the diode device will have a significant adverse effect on the EMI of the system.

Method used

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  • Trench type fast recovery diode and its preparation method
  • Trench type fast recovery diode and its preparation method
  • Trench type fast recovery diode and its preparation method

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Embodiment Construction

[0037] See figure 1 As shown, the trench type fast recovery diode of the present invention includes successively connected metal cathode layers 13, N + type substrate layer 12 and N - type epitaxial layer 11, N - There is a field oxide layer 1 on the upper part of the epitaxial layer 11, and more than three trench oxide layers 5 are arranged at intervals in the active region window of the field oxide layer 1, and an implantation region outside the trench is located between two trench oxide layers 5, and the trench The oxide layer 5 has a concave cavity, and the trench oxide layer 5 of the present invention has a depth of 8-15um and a wall thickness of The cavity of the trench oxide layer 5 is filled with trench polysilicon 4, and the bottom of each trench oxide layer 5 is in contact with the trench P + Type impurity layer 6 is connected, the trench P + The thickness of the type impurity layer 6 can be controlled in and trench P + type impurity layer 6 embedded in the N...

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Abstract

The invention relates to a groove type fast recovery diode. More than three groove oxide layers and groove external injection regions are arranged at intervals inside the active region window of a field oxide layer, wherein one groove external injection region is arranged between two groove oxide layers. The groove polysilicon is filled inside the concave cavities of the groove oxide layers. The bottoms of the groove oxide layers are connected with groove P+ type impurity layers. Each groove external injection region is composed of an N- type impurity charge accumulation layer, a groove external P-type impurity layer and a groove external P+ impurity layer, wherein the N- type impurity charge accumulation layer, the groove external P- type impurity layer and the groove external P+ impurity layer are sequentially connected, wherein the N- type impurity charge accumulation layer does not extend beyond the bottoms of the groove oxide layers. A terminal P- type impurity layer is arranged inside the terminal region of the active region window of the field oxide layer. The upper part of the field oxide layer is provided with a terminal polysilicon field plate layer. A metal anode layer is connected with the terminal polysilicon field plate layer, the groove oxide layers, the groove polysilicon inside the groove oxide layers and the groove external P+ impurity layer. According to the technical scheme of the invention, the groove type fast recovery diode is reduced in forward voltage, short in recovery time, high in UIS capability and good in soft recovery characteristics, which facilitates the industrial production.

Description

technical field [0001] The invention relates to a trench type fast recovery diode and a preparation method thereof, belonging to the technical field of fast recovery diodes. Background technique [0002] At present, fast recovery diodes with soft recovery characteristics are produced, and their active regions are generally integral Schottky structures or PIN structures. [0003] Since PIN diodes have higher breakdown voltage and stronger ESD capability than Schottky diodes, they are more suitable for industrial circuit applications. [0004] Although the PIN diode has the advantages of small on-state voltage drop, high breakdown voltage, good avalanche withstand UIS capability, strong anti-static discharge ESD capability and low high-temperature leakage. However, the PIN diode device is a bipolar device. Due to the conductance modulation effect, when the reverse recovery time is long, in order to improve the recovery speed, a thinner base area is used to reduce the forward ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 林茂戚丽娜张景超钱锴刘利峰赵善麒王晓宝
Owner MACMIC SCIENCE & TECHNOLOGY CO LTD
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