Method for mfg. semiconductor device and semiconductor device

Abstract

An object of the present invention is to obtain a semiconductor device manufacturing method capable of forming a part of an impurity-introduced region of a photodiode under a gate electrode without using tilt-spin implantation and excessive thermal diffusion. A photoresist 30 having a pattern of openings is formed on the end of the gate structure 15 and on the region where the photodiode 18 is to be formed adjacent to the end by photolithography. Next, using the photoresist 30 as an implantation mask, at an energy of 300-600keV and a dose of 1E12-1E14 ions / cm 2 Under certain implantation conditions, N-type impurities 31 such as phosphorus are vertically implanted. Therefore, N-type impurity introduction region 17 can be formed in the upper surface of P well 11 . At this time, the N-type impurity 31 can pass through the gate structure 15 and reach the P well 11 , so the N-type impurity introduction region 17 can also be formed under the gate structure 15 .

Description

technical field [0001] The present invention relates to a manufacturing method and structure of a semiconductor device, in particular to a manufacturing method and structure of a solid-state image sensor. Background technique [0002] Figure 6 It is a circuit diagram showing the structure of one pixel of a conventional CMOS image sensor (reference: Shunsuke Inoue et al., "3.25 million pixel APS-C size CMOS image sensor", ITE Technical Report, Vol.25, No.28, pp. .37~41). Such as Figure 6 As shown, one pixel of the CMOS image sensor consists of a photodiode 101, a transfer MOS transistor 102 for completely transferring the electrons generated in the photodiode 101 to the node FD, and a reset MOS transistor for resetting the potentials of the photodiode 101 and the node FD. The transistor 103 is composed of a source follower MOS transistor 104 for amplifying the potential of the node FD, and a selection MOS transistor 105 for selecting a read row. [0003] The cathode of th...

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