Induction coupling plasma processing device

Abstract

This inductively coupled plasma processing apparatus comprises the treatment chamber in which plasma processing is performed on a substrate, a process gas supply system which supplies process gas into the processing chamber, and an exhaust system, which exhausts the gas in the chamber. This device also comprises the dielectric wall, constituting the top wall of the treatment chamber, a high-frequency antenna provided above the wall, and the antenna chamber which is provided above the treatment chamber and houses the antenna and the bottom wall of which is formed of the dielectric wall and vertical walls, which divide the antenna chamber into a plurality of small chambers and supported by the sidewalls of the chamber. The dielectric wall is split into a plurality of pieces, corresponding to the small chambers, and each split piece of the wall is supported by the sidewalls of the antenna chamber and vertical walls.

Description

technical field [0001] The present invention relates to an inductively coupled plasma processing apparatus for performing plasma processing such as dry etching on a substrate to be processed such as a liquid crystal display (LCD) substrate by inductively coupled plasma. Background technique [0002] For example, in the LCD manufacturing process, plasma treatment such as etching or sputtering, CVD (Chemical Vapor Deposition), etc. is often used for the LCD glass substrate as the substrate to be processed. [0003] As a plasma processing apparatus for performing such plasma processing, various apparatuses are used, however, among them, an inductively coupled plasma (ICP) processing apparatus that can generate high-density plasma is known. [0004] In an inductively coupled plasma processing apparatus, typically, the ceiling of a processing chamber for performing plasma processing that can be maintained in vacuum is formed of a dielectric wall on which a radio frequency (RF) an...

AI Technical Summary

Problems solved by technology

[0008] However, in the technology disclosed in Japanese Patent Application Laid-Open No. 2001-28299, since the dielectric wall is supported by the support beam and the support beam is suspended by the suspension device, it is necessary to widen the width of the support beam so as to serve as a support for a part of the partition structure. The beam does not warp, however if the width of the support beam is widened, the effective area of ​​the dielectric wall is narrowed and the energy efficiency is reduced

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