Film transistor, wiring substrate, display device and electronic device
A technology of thin-film transistors and display devices, which can be used in transistors, circuits, photovoltaic power generation, etc., and can solve the problem of reducing characteristics
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Embodiment 1
[0349] First, a glass substrate with an average thickness of 1 mm is prepared and washed with water (cleaning solution).
[0350] Next, the glass substrate was immersed in an aqueous solution (25° C.) of distearyldimethylammonium chloride (cationic surfactant) for 60 seconds. Through this step, distearyldimethylammonium chloride is adsorbed on the surface of the glass substrate. Thereafter, the glass substrate was washed with water.
[0351] Next, the glass substrate was immersed in a Sn—Pd colloidal solution (25° C.) for 60 seconds. Through this step, Sn—Pd is adsorbed on the surface of the glass substrate. Thereafter, the glass substrate was washed with water.
[0352] Next, the glass substrate was immersed in an aqueous solution (25° C.) containing HBF4 and glucose for 60 seconds. Through this step, Sn is removed from the surface of the glass substrate, and Pd is exposed on the surface of the glass substrate. Thereafter, the glass substrate was washed with wate...
Embodiment 2～5
[0367] Except that the sintering conditions of the aqueous dispersion of Ag particles supplied to the gate insulating layer and the average thickness of the formed gate electrode were changed to those shown in Table 1, the others were the same as in the above-mentioned Example 1. figure 1 The thin film transistor shown.
Embodiment 6
[0369] Except that the glass substrate is replaced by a polyimide substrate with an average thickness of 35 μm, the others are the same as in Example 1. After the source electrode and the drain electrode are formed, the fluorene-bithiophene copolymer is placed on the polyimide substrate. The 1% wt / vol toluene solution was applied by the inkjet method (20 pL per droplet), and then dried at 60° C. for 10 minutes. Thus, an organic semiconductor layer having an average thickness of 50 nm was formed.
[0370] Thereafter, in the same manner as in Example 1, a gate insulating layer and a gate electrode were formed, and the figure 1 The thin film transistor shown.
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