Method and device for immersion lithography
一种光刻系统、工件的技术，应用在光学光刻领域，能够解决材料退化、能量输出大、光学机械设计麻烦等问题
Inactive Publication Date: 2006-11-15
MICRONIC LASER SYST AB
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Problems solved by technology
This complicates the optomechanical design and makes alignment and measurement very difficult
(3) 193nm lasers are not as reliable or stable as 248nm lasers, and their energy output is not as large as 248nm lasers, so obtaining and controlling the required exposure energy becomes problematic
(4) 193nm photons are very energetic and tend to cause degradation of the material they strike
[0005] Properly designed systems operating at 248nm using immersion optics are almost indeed capable of achieving lithographic specifications suitable for the 70nm semiconductor technology node, and for the reasons stated above, compared to the development of tools using shorter wavelengths This meets an easier technical challenge
Method used
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[0016] figure 1 An embodiment of the apparatus 100 for patterning a workpiece 60 according to the related art is shown, and the present invention can be easily embedded in this embodiment.
[0017] The device 100 includes a source 10 for emitting electromagnetic radiation, an objective lens device 50, a computer-controlled reticle 30, a beam adjustment device 20, a spatial filter 70 in a Fourier plane, and a Fourier lens The device 40, and the workpiece 60.
[0018] The source 10 can emit radiation in the wavelength range from infrared (IR) to extreme ultraviolet (EUV), the infrared is defined as 780nm to about 20μm, the extreme ultraviolet is defined in this application as from 100nm and below until radiant energy is used as Electromagnetic radiation processing is the range that is reflected and focused by optical components. The source 10 emits radiation either pulsed or continuously. The radiation emitted from the continuous radiation source 10 may be formed as pulsed radiati...
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The present invention relates to an immersion lithographic system for patterning a workpiece arranged at an image plane and covered at least partly with a layer sensitive to electromagnetic radiation. Said system comprising a source emitting electromagnetic radiation onto an object plane, a mask adapted to receive and modulate said electromagnetic radiation at said object plane and to relay said electromagnetic radiation toward said workpiece, and an immersion medium contacting at least a portion of a final lens of said lithographic system and a portion of said workpiece, wherein an area of said contacting is restricted by capillary forces. The invention further relates to a method for patterning a workpiece and a immersion lens as such.
Description
Technical field [0001] The present invention relates generally to techniques used for optical lithography, and in particular, to methods of patterning workpieces using immersion lithography. Background technique [0002] When making a pattern on a workpiece, the pattern can be exposed to a positive photoresist. The workpiece can be an integrated circuit, a mask, a reticle, a flat panel display, a micro-machine or a micro-optical device, and Such as lead frame and MCM packaged devices. In the case of manufacturing a mask, the resist in the exposed area is removed by development and etching processes, and the unprotected chromium is then dissolved by a chromium etchant. The resultant, that is, a glass plate having a pattern formed by opaque chromium, is used as an optical contact or projection mask for the manufacture of device layer patterns in flat panel displays or integrated circuits. [0003] The pattern generator may be one of the types of commercially available laser pattern...
Claims
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IPC IPC(8): G03F7/20
CPCG03F7/70341G03F7/20G03B27/00
Inventor 艾伦·卡罗尔
Owner MICRONIC LASER SYST AB