Electrochemical fabrication process using directly patterned masks

a technology of electrochemical fabrication and masking material, applied in the direction of 3d structure electroforming, liquid/solution decomposition chemical coating, coating, etc., can solve the problem of destructive separation of masking material from substra

Inactive Publication Date: 2005-03-03
MICROFAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CC mask plating process is distinct from a “through-mask” plating process in that in a through-mask plating process the separation of the masking material from the substrate would occur destructively.

Method used

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  • Electrochemical fabrication process using directly patterned masks
  • Electrochemical fabrication process using directly patterned masks
  • Electrochemical fabrication process using directly patterned masks

Examples

Experimental program
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Effect test

first embodiment

[0084]FIG. 5 provides a generalized process flowchart of the invention which forms a three-dimensional structure from a conductive material and from a dielectric material. The process of FIG. 5 begins with block 102 and then moves forward to block 104. Block 104 calls for the defining of a variable “n” to be that of the number of the current layer. It also calls for the defining of a number “N” which corresponds to a number of the final layer of the structure to be formed. After the defining of variables and parameters, the process moves forward to block 106 which calls for setting of variable “n” to a value of 1. The process then moves forward to block 108 which calls for the supplying of a substrate which may include one or more previously formed layers of material or deposits of material.

[0085] Next the process moves forward to block 112 which calls for the applying of a dielectric material onto the substrate (or previously formed layer during a second or subsequent loop through ...

second embodiment

[0109]FIG. 8 provides a generalized process flowchart of the invention which modifies a substrate by applying a conductive material and a dielectric material thereto.

[0110] The embodiment of FIG. 8 is similar to that of FIG. 5 with the exception that it calls for the formation of a single layer of material on a substrate. Operations 402, 408, 412, 414, 416, 418 and 426 correspond essentially and respectively to operations 102,108,112,114,116,118 and 126 of FIG. 5.

third embodiment

[0111]FIG. 9 provides a generalized process flowchart of the invention which forms a three-dimensional structure from a conductive material and from a dielectric material. The embodiment of FIG. 9 is similar to that of FIG. 5 with the exception that it contemplates the possibility that some other generalized process may be used to form one or more of the layers of the structure. In FIG. 9 similar operations to those shown in FIG. 5 are indicated with equivalent reference numbers. The process of FIG. 9 and that of FIG. 5 proceed in similar manners up through operation 108 after which the process of FIG. 9 moves forward to decision block 130 where an inquiry is made as to whether or not layer “n” is to be formed using a single dielectric and a single conductive material.

[0112] If this inquiry produces a positive response the process proceeds along a path that implements elements 112-124 in a manner analogous to that of the embodiment of FIG. 5. If decision block 130 produces a negativ...

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Abstract

Three-dimensional structures are electrochemically fabricated by depositing a first material onto previously deposited material through voids in a patterned mask where the patterned mask is at least temporarily adhered to previously deposited material and is formed and patterned directly from material selectively dispensed from a computer controlled dispensing device (e.g. an ink jet nozzle or array or an extrusion device). In some embodiments layers are formed one on top of another to build up multi-layer structures. In some embodiments the mask material acts as a build material while in other embodiments the mask material is replaced each layer by a different material which may, for example, be conductive or dielectric.

Description

RELATED APPLICATIONS [0001] This application claims benefit of the following U.S. Provisional Patent Applications Nos. 60 / 468,979, filed May 7, 2003; 60 / 469,053, filed May 7, 2003; and 60 / 533,891, filed Dec. 31, 2003. Each of these applications is hereby incorporated herein by references as if set forth in full herein.FIELD OF THE INVENTION [0002] The present invention relates generally to the field of electrochemical fabrication and the associated formation of three-dimensional structures (e.g. microscale or mesoscale structures). In particular, it relates to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and / or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material or precursor material to a surfac...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B05D1/32C23C18/16C25D5/02C25D5/10H01L21/768
CPCC25D5/022C25D5/10H01L21/7682C23C18/1657C25D1/003C23C18/1605H01L21/76838B33Y10/00
Inventor SMALLEY, DENNIS R.LOCKARD, MICHAEL S.
Owner MICROFAB
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