Capacitor and method for fabricating the same

a technology of capacitors and capacitors, applied in the field of capacitors, can solve the problems of increasing production costs, reducing the effective surface area of capacitors, and deteriorating reliability of the dielectric layer of ultra thin films, so as to reduce the number of processes, increase the effective surface area of capacitors, and reduce production costs

Inactive Publication Date: 2008-03-06
DONGBU ELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach simplifies the fabrication process, reduces costs, and maximizes capacitance by increasing the effective surface area, enabling higher device integration and precise capacitance adjustment.

Problems solved by technology

However, a dielectric layer of an ultra thin film tends to deteriorate reliability while higher-k materials usually require special processing.
The method for fabricating a capacitor as described above, requires at least four photolithography steps and seven deposition steps which unduly complicate the process and increase production costs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor and method for fabricating the same
  • Capacitor and method for fabricating the same
  • Capacitor and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, like reference designations will be used throughout the drawings to refer to the same or similar parts.

[0025] As shown in FIG. 2A, a polysilicon 21 is deposited on a substrate 20 and then patterned. The process for depositing and patterning the polysilicon 21 is simultaneously performed with a depositing and patterning process for forming a gate electrode of a semiconductor device, i.e. a metal-oxide-silicon (MOS) transistor, formed on the substrate 20.

[0026] As shown in FIG. 2B, N-type impurity ions and P-type impurity ions are implanted into the polysilicon 21 to form a first region N+ in which the N-type impurity ions are implanted and a second region P+ in which the P-type impurity ions are implanted, and at the same time, to form a third region (N+, P+) in which the N-type impurity ions and the P-type...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A capacitor structure and a method of fabricating the capacitor structure wherein. The lower electrode and the upper electrode are constructed to be separated from each other by a predetermined interval and to be engaged with each other using a series of alternating ridges so that an effective surface area can increase within a limited area.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit of Korean Patent Application No. 10-2004-0117006, filed on Dec. 30, 2004, which is hereby incorporated by reference as if fully set forth herein. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to capacitors, and more particularly, to a capacitor and a method for fabricating the same, which increases an effective surface area through a simplified process. [0004] 2. Discussion of the Related Art [0005] A unit cell of a semiconductor device is generally constructed with one transistor and one capacitor for storing an electrical charge as a unit of memory. As device integration increases, the area of the unit cell decreases. However, while the capacitor's layout area should be minimized, a sufficient capacitance must be maintained. These goals may be achieved by, for example, using a thinner dielectric or higher-k dielectrics. However, a dielectric layer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01G4/012H01L21/20H10B12/00
CPCH01L27/0629H01L28/86H01L27/0805H10B12/00
InventorCHOI, CHEE HONGKEUM, DONG YEAL
OwnerDONGBU ELECTRONICS CO LTD