Copper barrier chemical-mechanical polishing composition

a technology of chemical mechanical and coating, applied in the direction of other chemical processes, chemistry apparatus and processes, electrical apparatus, etc., can solve the problems of continuing and severe downward pricing pressure in the semiconductor industry

Active Publication Date: 2017-01-31
CMC MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The composition achieves high removal rates for copper and dielectric materials with improved selectivity and stability, reducing costs and maintaining performance, as demonstrated by increased TEOS and TaN polishing rates while maintaining low electrical conductivity.

Problems solved by technology

As is well known in the art, the semiconductor industry is subject to continuing and severe downward pricing pressure.
Such pricing pressure poses a challenge to the slurry formulator as the pressure to reduce costs often conflicts with the desired slurry performance metrics.

Method used

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  • Copper barrier chemical-mechanical polishing composition

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0098]The polishing rates of silicon oxide (TEOS), copper (Cu), Black Diamond® low-k dielectric (BD 1), and tantalum nitride (TaN) were evaluated in this example for various polishing compositions. Each of the polishing compositions included colloidal silica abrasive particles having a core shell structure in which a hydrolyzed or partially hydrolyzed aminopropyl trialkoxysilane (an aminosilane) was incorporated in the shell using a procedure similar to that described below in Example 12. A quantity of the concentrated dispersion prepared as in Example 12 was added to mixtures including a copper complexing agent and a copper polishing inhibitor to obtain the corresponding polishing compositions. Hydrogen peroxide was added to each polishing composition. Nine polishing compositions were prepared (1A-1I), each of which included colloidal silica having a mean particle size of 63 nm. Polishing compositions 1A-1F included 3.0 weight percent of the colloidal silica and 0.5 weight percent ...

example 2

[0103]The polishing rates of silicon oxide (TEOS), copper (Cu), Black Diamond® low-k dielectric (BD 1), and tantalum nitride (TaN) were evaluated in this example for various polishing compositions. Each of the polishing compositions included colloidal silica abrasive particles having a core shell structure in which a hydrolyzed or partially hydrolyzed aminopropyl trialkoxysilane (an aminosilane) was incorporated in the shell using a procedure similar to that described below in Example 12. A quantity of the concentrated dispersion prepared as in Example 12 was added to aqueous mixtures including an optional copper complexing agent and / or copper polishing inhibitor to obtain the corresponding polishing compositions. Eight polishing compositions were prepared (2A-2H), each of which included 4.5 weight percent of a colloidal silica having a mean particle size of 63 nm. The polishing compositions further included 0.5 weight percent hydrogen peroxide. Table 2A lists the concentrations of ...

example 3

[0108]The polishing rates of silicon oxide (TEOS), copper (Cu), Black Diamond® low-k dielectric (BD1), tantalum nitride (TaN), and a copper pattern were evaluated in this example for various polishing compositions. Each of the polishing compositions included colloidal silica abrasive particles having a core shell structure in which a hydrolyzed or partially hydrolyzed aminopropyl trialkoxysilane (an aminosilane) was incorporated in the shell using a procedure similar to that described below in Example 12. A quantity of the concentrated dispersion prepared as in Example 12 was added to an aqueous mixture including a copper complexing agent to obtain the corresponding polishing compositions. Four polishing compositions were prepared (3A-3D), each of which had a mean particle size of 63 nm. Polishing compositions 3A and 3B included 4.5 weight percent of the colloidal silica and compositions 3C and 3D included 6.0 weight percent of the colloidal silica. Each polishing composition includ...

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Abstract

A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Description

RELATED APPLICATION[0001]This application claims the benefit of U.S. Provisional Application No. 62 / 017,073 entitled Copper Barrier Polishing Composition and U.S. Provisional Application No. 62 / 017,100 entitled Colloidal Silica Abrasive for a Chemical Mechanical Polishing Composition, each of which was filed Jun. 25, 2014.BACKGROUND OF THE INVENTION[0002]A number of chemical-mechanical polishing (CMP) operations are used in both front-end-of-the-line (FEOL) and back-end-of-the-line (BEOL) processing of semiconductor devices. For example, the following CMP operations are commonly employed. Shallow trench isolation (STI) is an FEOL process used prior to formation of the transistors. A dielectric such as tetraethyl orthosilicate (TEOS) is deposited in openings formed in the silicon wafer. A CMP process is then used to remove the excess TEOS resulting in a structure in which a predetermined pattern of TEOS is inlaid in the silicon wafer. Tungsten plug and interconnect and copper interco...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): C09G1/02H01L21/321C09K3/14H01L21/306H01L21/3105C09K13/00
CPCC09G1/02C09K3/14H01L21/30625H01L21/31053H01L21/31055H01L21/3212C09K3/1463C09K13/00C09K3/1436C09K3/1409
InventorFU, LINGRUMBINE, STEVENDYSARD, JEFFREYWENG, WEILIU, LEILEONOV, ALEXEI
OwnerCMC MATERIALS LLC