The present invention belongs to the technical field of
semiconductor equipment, and specifically relates to a
silicon carbide crystal deposition device, comprising: a cylinder and a
chassis; the
chassis and the cylinder are sealed and cooperated to form a deposition space; a cover body with a curved
surface structure is arranged in the cylinder, so that the curved
surface structure is opposite to the center of a feed
nozzle, and plays a role in rapidly diverging and diverting
airflow; and the gradually smaller space between the bottom and the side wall of the curved
surface structure is conducive to increasing the flow rate and
backflow of the gas leaving the
nozzle, so as to form an
airflow that is rapidly transported downward, and the
airflow in the cover body flows rapidly from top to bottom in a single direction, which is conducive to the
mass transfer process of the deposited material, thereby improving the compactness of the deposited
crystal; the space in the cover body is small, and the material can effectively contact with the surface of the internal
electrode assembly, and the material is collected again through the air outlet holes on the cover body and blown to the
electrode assembly outside the cover, which can also promote the material to fully and effectively contact with the
electrode assembly outside the cover, and the material is subjected to two-stage contact and reaction, and the
utilization rate is significantly improved.