Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for etching wafer accurately

An etching and wafer technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as increased manufacturing costs, inability to obtain etching depth and etching shape, and increased wafer process defect rate.

Active Publication Date: 2008-08-27
刘惠如
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] On the whole, whether it is dry etching, wet etching, or immersion etching processing; when various etching technologies react with etching liquid or gas, the wafer is only in a fixed-point one-way rotation or static state, and it is impossible to obtain uniformity. The etching depth and etching shape, once the over-etching phenomenon occurs, the defect rate of the wafer process will increase, and the increase of the defect rate means that the invisible manufacturing cost will also increase. Therefore, the applicant of the present invention has successfully designed a A manufacturing method that can effectively process the precise shape and size on the wafer, greatly improving the yield of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for etching wafer accurately
  • Method for etching wafer accurately
  • Method for etching wafer accurately

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Please refer to Figure 7 , Figure 8 As shown, the embodiment of the present invention is designed with a rotating device 20. In terms of structure, the rotating device is provided with a driving gear 21, a ring body 22 is provided with inner ring teeth 23 on the inner ring wall, and a hollow hole 24 is provided at the central part of the ring body. , at least one gear 25 is arranged on the inner ring wall of the ring body 22, so that the driving wheel 21 penetrates through the hollow hole 24, so that at least one gear 25 is engaged between the driving wheel 21 and the inner ring teeth 23, and the bearing plate 26 can be It is fixed on each gear 25, and the periphery of the disk is provided with a gap 27 to facilitate the clamping of the wafer.

[0025] In a preferred embodiment, a cover plate 41 can be added on each gear 25, and the cover plate body is provided with a large number of through holes 42 for the top of the gear 25 to protrude, so that the bearing plate 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Being setup at one end, a spray head can blow out etching matter on wafer, which is placed at opposite end. A turning gear carries the wafer. Related to the spray head as center, the wafer moves along a revolution route; meanwhile, the wafer also generates own spinning. Thus, the etching matter is distributed on surface of the wafer evenly so as to be able to remove some materials on surface of wafer and control etvhing degree accurately.

Description

technical field [0001] The present invention relates to a wafer etching method, in particular to a method of etching (including dry etching and wet etching) the processed wafer, so that the size of the reactive material on the processed surface of the wafer can be controlled more for precision. Background technique [0002] According to the traditional semiconductor wafer process technology, etching process is used to remove certain material from the wafer surface. Generally, etching is divided into two types: dry etching (also known as plasma etching) and wet etching (wet cleaning). [0003] Please refer to figure 1 As shown, a general dry etching processing device is provided with a nozzle, and a rotating device 2 is provided directly below, and the wafer 3 to be processed is fixed on the rotating device 2. When the nozzle releases the etching gas 4, due to the gravity Particles of the acting gas are sprinkled on the surface of the wafer 3. In order to uniformize the de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/3065
Inventor 宋国隆
Owner 刘惠如