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Silicon-chip separating process

A silicon wafer, desorption technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as single process steps, no consideration of particles, elimination of cross-contamination of transmission systems, and impact on yield

Active Publication Date: 2008-10-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The defect of the existing process is that the process steps have a single role, which affects the yield, and does not take into account the elimination of particles caused by the halogen-based gas on the surface of the silicon wafer and the cross-contamination of the halogen-based gas to the transmission system

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In the polysilicon wafer etching process, the equipment used is the PM2 of the Equipment Technology Research Center of the North Microelectronics Base. The structure of the polysilicon wafer (doped) used is: polysilicon silica Silicon wafer (substrate substrate).

[0032] Wafer A is used.

[0033] The etching process is mainly divided into the following steps:

[0034] 1. The silicon wafer is sent to the surface of the electrostatic chuck in the chamber;

[0035] 2. Apply the voltage of the electrostatic chuck, and fix the silicon wafer on the surface of the electrostatic chuck through electrostatic attraction;

[0036] 3. Through the process gas;

[0037] 4. The pendulum valve adjusts the pressure to the set value;

[0038] 5. Add the lower electrode to start the glow;

[0039] 6. The etching process starts. The etching process mainly includes the following steps:

[0040] (1) BT (Break through), that is, the removal of the natural oxide layer, the process ...

Embodiment 2

[0048] Wafer A is used.

[0049] Adopt the method of embodiment 1, its difference is, wherein the step in the silicon wafer desorption process is as follows:

[0050] First, the silicon wafer is purged with oxygen and argon, the gas flow rates are 50 sccm and 100 sccm respectively, the pressure in the chamber is 0 mT, and the ESC voltage is reversed.

[0051] Then make the oxygen glow, the gas flow rate is 100 sccm, the pressure in the chamber is 15mT, and the power of the upper electrode is 300W.

[0052] At the same time, in this embodiment, when oxygen is glowing, the upper and lower electrodes of the electrostatic chuck are reversely connected, and the parameter is 1200V.

Embodiment 3

[0054] Wafer A is used.

[0055] Adopt the method for embodiment 2, its difference is, wherein the step in the silicon wafer desorption process is as follows:

[0056] Firstly, the gas flow rate of purging the silicon wafer with oxygen is 200 sccm, the pressure in the chamber is 0 mT, and the ESC voltage is reversely connected.

[0057] Then make oxygen glow, the gas flow rate is 200sccm, the pressure in the chamber is 10mT, and the power of the upper electrode is 400W.

[0058] At the same time, in this embodiment, when the oxygen is glowing, the upper and lower electrodes of the electrostatic chuck are reversed, and the parameter is 1000V

[0059] Using the electrostatic chuck desorption method of the present invention, see the effect comparison between the prior art and Figure 2-5 , it can be seen that the method of the present invention can well remove residues and particles on the surface of the silicon wafer, and the chuck can be desorbed smoothly.

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Abstract

This invention puts forward a new technology for stripping off adhesives of silicon chips including two steps: blowing a silicon chip with a gas going to initiate and initiating with the gas in the step, in which, the gas flow is 25-500sccm at initiating, the pressure in the chamber is 10-85mT and the upper electrode power is 150-850W, which can remove residuals and particles on silicon surfaces.

Description

technical field [0001] The invention relates to a gate etching process, in particular to a silicon wafer desorption process capable of increasing yield and reducing the surface roughness of silicon wafers. Background technique [0002] In the silicon gate dry etching process, the smooth desorption of the electrostatic chuck silicon wafer plays a vital role in the stable production capacity of the etching process itself and the etching process. In the finer and finer dry etching process, the influence of particles in the process has also become a serious problem. In the current deep submicron etching, halogen-based gas is still the main etching gas, and the halogen-based gas itself is very corrosive, especially for the transmission system of the etching system. From the perspective of productivity, it is the best choice to solve several problems in the same process. [0003] The desorption of the electrostatic chuck silicon wafer mainly depends on two aspects, the residual ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3065H01L21/683C23F1/12C23F4/00
Inventor 张庆钊
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD