Chemical and mechanical grinding method for aluminium

Abstract

This invention relates to an aluminum metal chemical mechanic grinding method, which comprises the following steps: forming an aluminum metal pattern on one bottom materials; then forming one oxide insulation layer on the metal pattern; grinding the insulation to the metal surface by chemical mechanic grinding method, wherein the method adopts the grinding agent with surface activity agent easy for absorbing aluminum materials; removing the surface activity agent on the aluminum pattern.

Description

technical field [0001] The invention relates to a chemical mechanical polishing (CMP) method for integrated circuits, in particular to a chemical mechanical polishing method for aluminum metal polishing. Background technique [0002] With the rapid development of integrated circuit technology in recent years, the line width of integrated circuits has reached the level of nanometers from microns. In the era of small line widths, the conditions of various manufacturing processes are more stringent than before. In the prior art, the aluminum pattern is patterned by reactive ion etching (RIE), which is an important and well-established method in the aluminum patterning process in integrated circuits. However, this method will reduce the light reflectivity of aluminum, which becomes one of the important factors to reduce the efficiency of the fabricated aluminum pattern and thus the chip. Ion bombardment and chemical attack are the main causes of the above defects. Moreover, th...

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Problems solved by technology

And the previous technology will cause the thickness non-uniformity of the insulating layer between the aluminum patterns on the wafer, and the variation between the middle area and the edge area of ​​the wafer can reach a thickness of 500-1000 angstroms

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