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Chemical mechanical polishing slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using same

A chemical-mechanical and slurry-abrasive technology, which is applied in the direction of polishing compositions containing abrasives, chemical instruments and methods, and other chemical processes, can solve problems such as the reduction of the grinding rate of the tungsten layer, and achieve the effect of improving the stability of the slurry

Pending Publication Date: 2022-04-08
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although dishing can be reduced by adding an amino acid compound, there is a problem that the grinding rate of the tungsten layer decreases

Method used

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  • Chemical mechanical polishing slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using same
  • Chemical mechanical polishing slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using same
  • Chemical mechanical polishing slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0099] This example shows the effect of polycarboxylic acids on the stability of slurry compositions comprising compounds of Formula 1. The components of the composition are shown in Table 1. The abrasive was silica particles having an average particle size (D50) of about 95 nm and charged at about 35 mV. Use deionized water as solvent. From the particle size data shown in Table 2, it can be seen that the polycarboxylic acid-containing slurry composition according to the present invention exhibits better stability than the polycarboxylic acid-free slurry composition. After storing in an oven at 40° C. for 7 days, the particle size of the slurry particles stored at high temperature was measured using a particle analyzer (Zetasizer Nano, Malvern Co., Ltd.). particle size.

[0100] Table 1

[0101]

[0102] Table 2

[0103] slurry Types of Primary particle size (nm) Particle size after storage at high temperature (nm) 1-A this invention 95 99 1-...

example 2

[0105] This example shows the effect of compounds of formula 1 on tungsten etch (corrosion) rate and tungsten grinding rate. The components of the composition are shown in Table 3. From the tungsten etching (corrosion) rate shown in Table 4, it can be seen that the slurry composition containing the compound of formula 1 has lower tungsten etching (corrosion) than other compositions not containing the compound of formula 1 or containing phosphorus-containing functional groups rate. In addition, it can be seen from the tungsten grinding rate shown in Table 4 that the phosphorus-containing amino acid corresponding to the compound of formula 1 exhibits a lower tungsten etching (corrosion) rate and a higher tungsten grinding rate than other amino acids. Furthermore, as shown in Table 4, the phosphorous-containing amino acid corresponding to the compound of Formula 1 allows a higher tungsten grinding rate than the phosphorous-containing compound and the amino acid when used in the ...

example 3

[0111] This example shows the effect of compounds of formula 1 on tungsten dishing. As can be seen from the tungsten depressions shown in Table 5, the slurry composition containing the compound of Formula 1 exhibited smaller tungsten depressions than other compositions not containing the compound of Formula 1 or containing phosphorus-containing functional groups.

[0112] table 5

[0113]

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Abstract

A chemical mechanical polishing (CMP) slurry composition for polishing a tungsten pattern wafer and a method for polishing a tungsten pattern wafer using the same. The chemical mechanical polishing slurry composition includes: at least one selected from a polar solvent and a non-polar solvent; an abrasive; a compound represented by Formula 1; and a polycarboxylic acid, in which in the chemical mechanical polishing slurry composition, the compound represented by Formula 1 is present in an amount of about 0.001 wt% to about 2 wt%, and the polycarboxylic acid is present in an amount of about 0.001 wt% to about 5 wt%.

Description

technical field [0001] The invention relates to a chemical mechanical polishing slurry composition for grinding tungsten patterned wafers and a method for grinding tungsten patterned wafers using the same. More specifically, the present invention relates to a chemical mechanical polishing slurry composition for grinding tungsten patterned wafers that can minimize the reduction in tungsten polishing rate while improving slurry stability by reducing dishing in the tungsten pattern when polishing the tungsten pattern object, and a method of grinding a tungsten patterned wafer using the same. Background technique [0002] Chemical mechanical polishing (CMP) compositions and methods for polishing (or smoothing) substrate surfaces are well known in the related art. A polishing composition for grinding a metal layer (eg, a tungsten layer) on a semiconductor substrate may include abrasive particles and chemical accelerators (eg, oxidizing agents, chelating agents, catalysts, etc.) ...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/321
CPCC09K3/14H01L21/304C09G1/02H01L21/321C09K3/1454H01L21/32115
Inventor 李知虎南沇希辛奈律李泳基李永熙李锺元
Owner SAMSUNG SDI CO LTD
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