Chemical mechanical polishing system and method of polishing wafer using the system

Abstract

The invention discloses a chemical-mechanical grinding system and grinding method for wafers. A layer of materials to be grinded is formed on the said wafers. The said method performs chemical-mechanical grinding on the said wafers by using an abrasion pad, wherein the said wafers sway along a radial direction of the abrasion pad by certain amplitude determined by a following method. The amplitude is determined by a first relation curve and the quantity of the wafers grinded by the abrasion pad; the said first relation curve is a curve showing a relation between amount of the wafers grinded by the abrasion pad and the said amplitude when the thickness difference between an upper edge area and a center area on grinded wafers reaches a target value. The Chemical-mechanical grinding method compensates the thickness difference between the center area and the upper edge area after grinding by adjusting the amplitude of the wafers' swaying along the radial direction of the abrasion pad in a grinding process, such that the appearance change of the wafers due to the long using time of the abrasion pad can be prevented.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing process, in particular to a chemical mechanical grinding system and a method for grinding wafers using the system. Background technique [0002] With the development of semiconductor technology and the reduction of device size, photolithography technology has higher and higher requirements for the flatness of the wafer surface. Among them, chemical mechanical polishing (CMP) is a planarization method commonly used in the semiconductor manufacturing process. In addition, chemical mechanical polishing can also be used to remove films deposited on the wafer surface. The principle of chemical mechanical polishing includes the combination of chemical and mechanical effects. On the surface of the material layer to be polished, a specific layer is formed due to a chemical reaction, and then the specific layer is removed mechanically. [0003] figure 1 It is a top view of an existing chemical mech...

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Problems solved by technology

That is to say, the existing chemical mechanical polishing process all adopts the same process parameters in the different stages of use of the grinding pad 110 and the finishing disc 152, therefore, it is impossible to adjust the prolongation of the service time due to the grinding pad 110 and the finishing disc 152. Influence of mechanical grinding process

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