Solderable top metal for SiC device

Abstract

A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.

Description

[0001] related application [0002] This application is based on, and claims priority from, U.S. Provisional Application 60 / 620,756, entitled "Solderable Top Metal ForSiC Die," filed October 21, 2004, the claims of priority being made hereby, and the contents of which are hereby Cited as references. technical field [0003] The present invention relates generally to semiconductor devices, and more particularly to solderable contacts for silicon carbide semiconductor devices. Background technique [0004] Silicon carbide (SiC) has become a well-established technology for high-power devices, for example, for the manufacture of advanced devices such as Schottky diodes, transistors JFETs and MOSFETs. In particular, SiC devices can be packaged so that wire bonding, for example, connects the electrodes of the device to the device package lead frame. However, in order to take full advantage of the high performance characteristics of SiC devices, the type of device packaging requi...

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