Storage unit, integrated circuit and manufacturing method of the storage unit array

Abstract

A charge trapping memory cell is described, having pocket implants along the sides of the channel and having the same conductivity type as the channel, and which implants have a concentration of dopants higher than in the central region of the channel. This effectively disables the channel in the region of non-uniform charge trapping caused by a bird's beak or other anomaly in the charge trappingstructure on the side of the channel. The pocket implant can be formed using a process compatible with standard shallow trench isolation processes.

Description

technical field [0001] The present invention relates to a nonvolatile memory device, in particular to a manufacturing method of a storage unit, an integrated circuit and a storage unit array. Background technique [0002] Flash memory is a memory cell that stores charge between the channel and the gate of a field effect transistor. Since the stored charge affects the threshold voltage of the transistor, the change in the threshold voltage can be used to represent data. [0003] A floating gate memory cell is a widely used charge storage memory cell. In the floating gate memory cell, a gate composed of a conductive material (such as conductive type polysilicon) is formed on a tunneling dielectric, and An interpoly dielectric is formed on the floating gate to separate it from the word line or control gate of the memory cell. Although this technology has been used quite successfully, as the size of the memory cells and the distance between the memory cells are getting smaller ...

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Problems solved by technology

This means that the ratio of the channel sides to the overall channel width becomes larger, so the non-uniform threshold voltage problem caused by the variation of the trapped charge along the channel sides is gradually exacerbated

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