Memory device based on phase change quantum dots and manufacturing method thereof

Abstract

The invention discloses a memory device based on phase change quantum dots and a manufacturing method of the memory device. The memory device based on the phase change quantum dots comprises a semiconductor substrate, a tunneling layer, a phase change quantum dot film layer, a barrier layer, a first electrode and a second electrode. The tunneling layer is arranged on the semiconductor substrate; the phase change quantum dot film layer is arranged on the tunneling layer and comprises the phase change quantum dots, and the phase change quantum dots can achieve information storage through trapping tunneling charges and reversible transformation between a crystalline state and an amorphous state; the barrier layer is arranged on the phase change quantum dot film layer and can stop charges trapped by the phase change quantum dots from entering the first electrode; the first electrode supplies electricity to the barrier layer; the second electrode supplies electricity to the semiconductor substrate.

Description

Background technique [0001] With the rapid development of the consumer electronics market in recent years, the memory market, which is an important part of the semiconductor and information industries, is getting bigger and bigger. At present, the mainstream memory in the market is DRAM and flash memory. Although the DRAM has the advantages of high capacity and low cost, the data of the DRAM cannot be saved after the power supply is turned off, which limits the application range of the DRAM. In addition, after the feature size of DRAM is reduced to close to 45 nanometers, the requirements for materials are very high. It is necessary to use ultra-high dielectric constant materials with a dielectric constant greater than 700 to maintain a sufficiently high capacitance. Although flash memory is a non-volatile storage technology, flash memory also has disadvantages such as high power consumption, poor radiation resistance, short cycle life, and limitations in size reduction. [...

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the problem of single storage state in the prior art, the present invention provides a storage device based on phase quantum dots and a preparation method thereof

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