Multiple-temperature area heating body and method for manufacturing same

A manufacturing method and technology of heating body, which are applied in chemical instruments and methods, crystal growth, post-processing, etc., can solve the problems of affecting the stability of the temperature field, increasing the cost of equipment and difficulty of control, and simplifying the operation and maintaining the temperature field. , the effect of reducing costs

Inactive Publication Date: 2007-12-12
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, in the pulling method of resistance heating (see Chemical Engineering Science 2004, 59: 1437-1457), heat exchange method (see Journal of Crystal Growth 1979, 46: 601-606), temperature gradient method (see Journal of Crystal Growth 1998, 193:123-126) and other crystal growth furnaces, a simple wave-type loop heating element is often used, which does not

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  • Multiple-temperature area heating body and method for manufacturing same

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Embodiment 1

[0034] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =45mm, H B =215mm, H C =0; W A =45mm, W B =43mm, W C =0mm. Place the heating element in the temperature gradient crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 1#.

Embodiment 2

[0036] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =115mm, H B =145mm, H C =0; W A =45mm, W B =43mm, W C =0mm. Place the heating element in a temperature gradient crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 2#.

Embodiment 3

[0038] A high-purity graphite resistance heating material is used to make a cylinder with an outer diameter of D=119mm, a wall thickness of T=4.5mm, and a height of H=260mm. According to the present invention, the heating element is grooved, wherein: H A =45mm, H B =180mm, H C =35mm; W A =45mm, W B =43mm, W C = 20mm. Place the heating element in a temperature ladder crystal growth furnace, close the furnace, vacuum, fill with high-purity argon gas and raise the temperature, and measure the temperature distribution of the crystal growth zone, as shown in Figure 2 on line 3#.

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Abstract

The invention relates to a kind of multiple- temperature heater for crystal growth and the preparing method. It is to combine heating units with different resistance together, or slit one heating barrel, to form a series of heating circuit heater with different resistances. The current generates different heat when passes through sections with different resistance and thus forms different temperature- zone; the action range and gradient value of each temperature- zone can be changed by chaning relative resistance or length for each section. The invention can improve the flexibilty for temperature- zone, reduce difficulty for growth control and cost, and is favoable for temeprature- zone stability maintenance.

Description

Technical field [0001] The invention relates to crystal growth, in particular to a multi-temperature zone heating element which can be applied to a crystal growth furnace and can effectively establish a suitable temperature gradient field and a manufacturing method thereof. Background technique [0002] A very important condition for growing high-quality crystals is to have a suitable temperature field. The temperature distribution in the growth system, or the temperature gradient in the crystal, in the melt, and at the solid-liquid interface, has a decisive influence on the quality of the crystal. However, different crystals have different characteristics, and the main defects that need to be controlled are often different, and their requirements for temperature field conditions are naturally different. Therefore, there is no strict criterion for the so-called suitable temperature field. Generally speaking, a large temperature gradient is required for doped crystals (especially ...

Claims

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Application Information

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IPC IPC(8): C30B35/00
Inventor 李红军苏良碧徐军钱小波周国清
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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