Fin structure and method of manufacturing fin transistor adopting the fin structure

Abstract

Provided are a fin structure and a method of manufacturing a fin transistor adopting the fin structure. A plurality of mesa structures including sidewalls are formed on the substrate. A semiconductor layer is formed on the mesa structures. A capping layer is formed on the semiconductor layer. Thus, the semiconductor layer is protected by the capping layer and includes a portion which is to be formed as a fin structure. A portion of an upper portion of the capping layer is removed by planarizing, and thus a portion of the semiconductor layer on upper surfaces of the mesa structures is removed. As a result, fin structures are formed on sides of the mesa structures to be isolated from one another. Therefore, a fin structure having a very narrow width can be formed, and a thickness and a location of the fin structure can be easily controlled.

Description

technical field [0001] The present invention relates to a method of manufacturing a fin structure, and more particularly, to a method of manufacturing a fin transistor used in a semiconductor memory device. Background technique [0002] Fin transistors are suitable for 100nm or smaller design rules (design rule). In particular, fin transistors have been studied as low-power, high-efficiency, and high-speed devices. An active region with a line width of 20nm or less is extremely required to obtain full depletion of the fin transistor. In order to obtain a fin transistor satisfying such requirements, it is very important to fabricate a fin structure as an active region. [0003] Traditionally, sidewall techniques, ultraviolet lithography, electron beam lithography, etc. are used to form the fin structure. A known method is to form a polysilicon fin structure on a silicon substrate using sidewall technology. US Patent Application Publication No. 2005-0048727 discloses a met...

AI Technical Summary

Problems solved by technology

In these conventional methods, due to the narrow line width, the uniformity of the fin structure is reduced, and the cost of manufacturing the fin structure is high

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