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Method of fabricating a bipolar transistor

A bipolar transistor, transistor technology, used in the manufacture of transistors, diodes, semiconductor/solid state devices, etc.

Inactive Publication Date: 2008-08-06
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this approach is that additional layers and a separate masking step are required to form the wells in which the bipolar transistors are fabricated.

Method used

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  • Method of fabricating a bipolar transistor
  • Method of fabricating a bipolar transistor
  • Method of fabricating a bipolar transistor

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Experimental program
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Embodiment Construction

[0012] As shown in Figure 1, the fabrication method begins with the results of the first fabrication steps of a standard shallow well isolation (STI) fabrication method. A silicon-on-insulator substrate is provided, the silicon-on-insulator substrate comprising a substrate insulating region 1 and a substrate region 3 covering the substrate insulating region 1 . Alternatively, a standard semiconductor substrate without the substrate insulating region 1 can be used. The substrate insulating region 1 may comprise silicon dioxide and the substrate region 3 may comprise a semiconductor material such as, for example, n-type silicon. The first well 5 and the second well 7 are provided in the substrate region 3 , whereby the bottom of the first well 5 and the bottom of the second well 7 both expose the substrate region 3 . In addition, the bottom and side walls of the first well 5 and the second well 7 are covered with the first insulating liner layer 11, and the substrate region 3 a...

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Abstract

The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor (29) or a lateral bipolar transistor (49) in a first trench (5, 50) and a shallow trench isolation region (27, 270) in a second trench (7, 70). Further, the fabrication method may simultaneously form a vertical bipolar transistor (27) in the first trench (5, 50), a lateral bipolar transistor (49) in a third trench and a shallow trench isolation region (27, 270) in the second trench (7, 70).

Description

technical field [0001] The invention relates to a method of manufacturing a bipolar transistor. Background technique [0002] In WO 03 / 100845 a method of manufacturing a bipolar transistor is disclosed, wherein a substrate is provided with two shallow well isolation regions and an insulating layer covering the substrate, between which two shallow well isolation regions have an n-type epitaxial collector region. A layer structure comprising a conductive layer is formed on the insulating layer, and then a window or well is etched through the conductive layer. In this well, a SiGe heterojunction bipolar transistor is fabricated. The disadvantage of this approach is that an extra layer and a separate masking step are required to form the wells in which the bipolar transistors are fabricated. Contents of the invention [0003] It is an object of the invention to provide a method for manufacturing bipolar transistors in wells with a minimum number of additional manufacturing ...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/735H01L29/732H01L21/762H01L27/06
CPCH01L29/66272H01L21/76224H01L27/0641H01L27/0647H01L29/6625H01L29/66265H01L29/732H01L29/735
Inventor 约翰内斯·J·T·M·东科尔斯埃尔文·海曾韦伯·D·范诺尔特
Owner NXP BV