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High voltage generator circuit and flash device including same

一种高电压、产生器的技术，应用在半导体存储装置领域，能够解决影响编程操作等问题

Active Publication Date: 2013-12-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, a change in the high voltage applied to the source line of the memory cell affects the program operation

Method used

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  • High voltage generator circuit and flash device including same
  • High voltage generator circuit and flash device including same
  • High voltage generator circuit and flash device including same

Examples

Experimental program
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Embodiment Construction

[0032] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Like numbers refer to like parts throughout the drawings.

[0033] image 3 is a block diagram showing a flash memory device according to an exemplary embodiment of the present invention.

[0034] refer to image 3 , the flash memory device may have a plurality of bit lines connected to one input / output line I / O. The flash memory device may include: a memory cell array 300 , a source line decoder circuit 310 , a high voltage generator circuit 320 and a sense amplifier circuit 330 . Although in image 3 Not shown in , but the flash memory device may also include row decoder circuits, column decoder circuits, input / output interfaces, control logic, and the like.

[0035] The memory cell array 300 may include: n word lines WL1˜WLn, m bit lines BL1˜BLm, n×m memory cells Q1˜Q16 arranged at intersections of word lines WL1˜WLn and bit lines BL1˜BLm...

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Abstract

A high voltage generator circuit includes a high voltage generator configured to generate a high voltage; and a control circuit configured to control the high voltage generator so as to vary the high voltage in response to variations of a peripheral temperature.

Description

[0001] This application claims priority from Korean Patent Application No. 2007-43155 filed on May 3, 2007 at the Korean Intellectual Property Office, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to a semiconductor memory device, and more particularly, to a semiconductor memory device using a high voltage. Background technique [0003] A flash memory device is a non-volatile storage device that does not require energy to retain information stored therein. In addition, although a flash memory device does not operate at a higher speed than DRAM used as a main memory in a PC, it has a high reading speed and is strong against impacts compared with a hard disk. [0004] Flash memory devices are widely used as memory in battery powered applications. In addition, flash memory devices are robust and able to withstand high voltage and hot water. [0005] A flash memory device is a computer storage device that can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C5/14G05F1/10G11C16/30G11C16/08
CPCG11C16/30G11C7/04G11C8/12G11C5/145G11C16/34
Inventor 金泰成
Owner SAMSUNG ELECTRONICS CO LTD